XR1002 Mimix Broadband, XR1002 Datasheet
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XR1002
Manufacturer Part Number
XR1002
Description
GaAs MMIC Receiver
Manufacturer
Mimix Broadband
Datasheet
1.XR1002.pdf
(10 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
XR1002-QB-0N00
Manufacturer:
MIMIX
Quantity:
20 000
Part Number:
XR1002-V
Manufacturer:
MIMIX
Quantity:
20 000
18.0-34.0 GHz GaAs MMIC
Receiver
Features
May 2006 - Rev 21-May-06
Mimix Broadband’s 18.0-34.0 GHz GaAs MMIC receiver has a 12.0 dB gain
control range, a noise figure of 3.0 dB and 25.0 dB image rejection across
the band. This device is a three stage LNA followed by a single transistor
"Tee" attenuator and an image reject fundamental resistive HEMT mixer.
At high signal levels the radio AGC system can be used to reduce the
receiver gain improving the IIP3 providing for minimum distortion at
modulation schemes as high as 256 QAM (ETSI-see Technical Note 1).
The image reject mixer eliminates the need for a bandpass filter after the
LNA to remove thermal noise at the image frequency. I and Q mixer
outputs are provided and an external 90 degree hybrid is required to
select the desired sideband. This MMIC uses Mimix Broadband’s 0.15 µm
GaAs PHEMT device model technology, and is based upon electron
beam lithography to ensure high repeatability and uniformity. The chip
has surface passivation to protect and provide a rugged part with
backside via holes and gold metallization to allow either a conductive
epoxy or eutectic solder die attach process. This device is well suited for
Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT
applications.
General Description
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
Fundamental High Dynamic Range Receiver
Integrated Gain Control
+4.0 dBm Input Third Order Intercept (IIP3)
14.0 dB Conversion Gain
3.0 dB Noise Figure
25.0 dB Image Rejection
100% On-Wafer RF, DC and Noise Figure Testing
100% Visual Inspection to MIL-STD-883 Method 2010
Electrical Characteristics (Ambient Temperature T = 25
Frequency Range (RF) Upper Side Band
Frequency Range (RF) Lower Side Band
Frequency Range (LO)
Frequency Range (IF)
Input Return Loss RF (S11)
Small Signal Conversion Gain RF/IF (S21)
Attenuation
LO Input Drive (P
Image Rejection
Noise Figure (NF)
Isolation LO/RF
Input Third Order Intercept (IIP3)
Drain Bias Voltage (Vd1,2)
Gate Bias Voltage (Vg1,2) (Vg4=-0.8V)
Control Bias Voltage (Vg3)
Supply Current (Id) (Vd=4.5V, Vg=-0.5V Typical)
Characteristic Data and Specifications are subject to change without notice. ©2006 Mimix Broadband, Inc.
LO
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
)
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Parameter
their obligation to be compliant with U.S. Export Laws.
1
2
Chip Device Layout
Absolute Maximum Ratings
(1) Measured using constant current, 10dB attenuation and
-20dBm total input power.
(2) At minimum attenuation.
(3) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
Supply Voltage (Vd)
Supply Current (Id)
Gate Bias Voltage (Vg)
Input Power (RF Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
Units
dBm
dBm
GHZ
VDC
VDC
VDC
GHz
GHz
GHz
dBc
mA
dB
dB
dB
dB
dB
+12.0
Min.
18.0
18.0
14.0
11.0
15.0
-1.0
-1.5
DC
0.0
-
-
-
-
-
-
+15.0
Typ.
10.0
14.0
25.0
40.0
+4.0
+4.5
-0.5
-1.2
135
3.0
-
-
-
-
-
o
+6.0 VDC
300 mA
+0.3 VDC
-65 to +165
-55 to MTTF Table
MTTF Table
C)
0.0 dBm
+18.0
Max.
+5.5
R1002
34.0
34.0
38.0
12.0
270
4.0
3.7
0.0
0.0
-
-
-
-
-
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