RF1S60P03SM Intersil Corporation, RF1S60P03SM Datasheet

RF1S60P03SM

Manufacturer Part Number

RF1S60P03SM

Description

60A/ 30V/ 0.027 Ohm/ P-Channel Power MOSFETs

Manufacturer

Intersil Corporation

Datasheet

1.RF1S60P03SM.pdf (7 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

RF1S60P03SM

Manufacturer:

KA/INTRISII

Quantity:

12 500

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60A, 30V, 0.027 Ohm, P-Channel Power

MOSFETs

These P-Channel power MOSFETs are manufactured using

the MegaFET process. This process, which uses feature

sizes approaching those of LSI integrated circuits gives

optimum utilization of silicon, resulting in outstanding

performance. They were designed for use in applications

such as switching regulators, switching converters, motor

drivers and relay drivers. These transistors can be operated

directly from integrated circuits.

Formerly developmental type TA49045.

Ordering Information

NOTE: When ordering, use the entire part number. Add the suffix 9A to

obtain the TO-263AB variant in tape and reel, i.e. RF1S60P03SM9A.

Packaging

RFG60P03

RFP60P03

RF1S60P03SM

PART NUMBER

SIDE METAL)

(BOTTOM

DRAIN

JEDEC STYLE TO-247

TO-247

TO-220AB

TO-263AB

PACKAGE

4-140

Data Sheet

RFG60P03

RFP60P03

F1S60P03

SOURCE

DRAIN

BRAND

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

GATE

SOURCE

JEDEC TO-263AB

RFG60P03, RFP60P03, RF1S60P03SM

http://www.intersil.com or 407-727-9207

Features

• 60A, 30V

• r

• Temperature Compensating PSPICE

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• 175

• Related Literature

Symbol

- TB334 “Guidelines for Soldering Surface Mount

DS(ON)

Components to PC Boards”

(FLANGE)

C Operating Temperature

(FLANGE)

DRAIN

= 0.027

PSPICE® is a registered trademark of MicroSim Corporation.

July 1999

JEDEC TO-220AB

File Number 3951.3

SOURCE

Intersil Corporation 1999

Model

DRAIN

GATE

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