SI7430DP Vishay, SI7430DP Datasheet

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SI7430DP

Manufacturer Part Number
SI7430DP
Description
N-Channel 150-V (D-S) WFET
Manufacturer
Vishay
Datasheet

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Notes:
a. Based on T
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 sec.
d. See Solder Profile (
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 65 °C/W.
Document Number: 74282
S-61293-Rev. A, 24-Jul-06
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
PRODUCT SUMMARY
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
V
DS
150
(V)
Ordering Information: Si7430DP-T1-E3 (Lead (Pb)-free)
8
6.15 mm
D
C
= 25 °C.
7
0.045 at V
0.047 at V
D
6
r
http://www.vishay.com/ppg?73257
DS(on)
D
PowerPAK SO-8
Bottom View
5
D
GS
GS
J
(Ω)
= 150 °C)
= 10 V
b, f
= 8 V
1
S
2
N-Channel 150-V (D-S) WFET
S
3
I
S
D
5.15 mm
26
25
(A)
4
Steady State
G
t ≤ 10 sec
a
d, e
T
T
T
T
T
T
L = 0.1 mH
T
T
T
T
C
C
C
C
C
A
A
A
A
A
). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
New Product
Q
= 25 °C, unless otherwise noted
23 nC
g
(Typ)
Symbol
R
R
thJA
thJC
Symbol
T
J
V
V
E
I
I
P
, T
I
DM
I
AS
DS
GS
AS
D
S
D
FEATURES
APPLICATIONS
stg
• Extremely Low Q
• 100 % R
• 100 % UIS Tested
• Primary Side Switch
• Single-Ended Power Switch
Reduced dV/dt, Q
Typical
1.5
19
g
Tested
G
gd
gd
- 55 to 150
N-Channel MOSFET
WFET
7.2
5.7
4.5
5.2
3.3
Limit
and Shoot-Through
± 20
150
260
26
21
50
32
20
20
64
44
b, c
b, c
b, c
b, c
b, c
®
D
S
Maximum
Technology for
www.DataSheet4U.com
1.8
24
Vishay Siliconix
Si7430DP
www.vishay.com
°C/W
Unit
Unit
RoHS
COMPLIANT
mJ
°C
W
V
A
1

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SI7430DP Summary of contents

Page 1

... Bottom View Ordering Information: Si7430DP-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation ...

Page 2

... Si7430DP Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... S-61293-Rev. A, 24-Jul- thru 100 Si7430DP www.DataSheet4U.com Vishay Siliconix 1.2 0 125 ° ° ° – Gate-to-Source Voltage (V) GS Transfer Characteristics 2000 C iss ...

Page 4

... Si7430DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless noted 100 150 ° 0.1 0.01 0.001 0 0.2 0.4 0.6 V − Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 1.0 0.5 0 0.5 - 1 – Temperature ( C) J Threshold Voltage www.vishay.com °C J 0.8 1 1.2 75 100 125 150 ...

Page 5

... T – Case Temperature (°C) C Current Derating* 2.5 2.0 1.5 1.0 0.5 0.0 100 125 150 = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dis- Si7430DP www.DataSheet4U.com Vishay Siliconix 125 150 100 125 T – Case Temperature (°C) C Power, Junction-to-Ambient www ...

Page 6

... Si7430DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.05 0.1 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech- nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www ...

Page 7

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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