SI7430DP Vishay, SI7430DP Datasheet - Page 4

• Manufacturer Part Number: SI7430DP
• Description: N-Channel 150-V (D-S) WFET
• Manufacturer: Vishay

Si7430DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless noted
www.vishay.com
4
0.001
0.01
100
0.1
- 0.5
- 1.0
- 1.5
10
1.0
0.5
0.0
1
- 50
0
I
D
- 25
= 5 mA
Source-Drain Diode Forward Voltage
0.2
V
SD
0
T
J
Threshold Voltage
− Source-to-Drain Voltage (V)
T
= 150 °C
0.4
J
– Temperature ( C)
25
50
0.6
0.01
100
0.1
10
75
1
0.01
0.8
*Limited by r
Single Pulse
T
T
Safe Operating Area, Junction-to-Ambient
100
*V
J
A
= 25 °C
= 25 °C
GS
1
125
0.1
V
minimum V
DS
DS(on)
– Drain-to-Source Voltage (V)
150
1.2
1
GS
at which r
10
DS(on)
is specified
200
160
120
0.20
0.16
0.12
0.08
0.04
0.00
100
40
80
0
0.001
0
Single Pulse Power, Junction-to-Ambient
1 ms
10 ms
100 ms
1 s
10 s
dc
On-Resistance vs. Gate-to-Source Voltage
I
D
1000
= 5 A
2
0.01
V
GS
T
J
– Gate-to-Source Voltage (V)
= 25 °C
Time (sec)
4
0.1
S-61293-Rev. A, 24-Jul-06
Document Number: 74282
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6
T
J
1
= 125 °C
8
10
10