SI7812DN Vishay Siliconix, SI7812DN Datasheet

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SI7812DN

Manufacturer Part Number
SI7812DN
Description
N-Channel 75-V (D-S) MOSFET
Manufacturer
Vishay Siliconix
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI7812DN-T1-E3
Manufacturer:
VISHAY
Quantity:
20 000
Part Number:
SI7812DN-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI7812DN-T1-GE3
Quantity:
70 000
www.DataSheet.co.kr
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. Package limited.
Document Number: 73332
S-83050-Rev. D, 29-Dec-08
Ordering Information: Si7812DN-T1-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
PRODUCT SUMMARY
V
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
DS
75
(V)
8
3.30 mm
D
7
D
6
0.046 at V
0.037 at V
D
PowerPAK 1212-8
Bottom View
Si7812DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
5
R
D
DS(on)
GS
GS
1
(Ω)
J
= 4.5 V
= 10 V
S
= 150 °C)
2
S
N-Channel 75-V (D-S) MOSFET
3
S
3.30 mm
4
G
I
D
16
16
(A)
e
e
c, d
A
= 25 °C, unless otherwise noted
Q
g
L = 0.1 mH
T
T
T
T
T
T
T
T
T
T
8 nC
(Typ.)
C
C
A
A
C
A
C
C
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• Low Thermal Resistance PowerPAK
• Primary Side Switch
Symbol
T
Available
Package with Small Size and Low 1.07 mm
Profile
J
V
V
E
I
I
P
, T
DM
I
I
AS
DS
GS
D
AS
S
D
stg
®
G
Power MOSFET
N-Channel MOSFET
- 55 to 150
7.2
5.7
3.2
3.8
2.4
Limit
± 20
D
S
260
16
16
16
75
25
15
11
52
33
a, b
a, b
a, b
a, b
a, b
e
e
e
Vishay Siliconix
®
Si7812DN
www.vishay.com
Unit
mJ
°C
W
V
A
1
Datasheet pdf - http://www.DataSheet4U.net/

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SI7812DN Summary of contents

Page 1

... S 3. Bottom View Ordering Information: Si7812DN-T1-E3 (Lead (Pb)-free) Si7812DN-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Avalanche Current Single-Pulse Avalanche Energy ...

Page 2

... Si7812DN Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter a, b Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Maximum under Steady State conditions is 81 °C/W. SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage ...

Page 3

... Document Number: 73332 S-83050-Rev. D, 29-Dec- °C, unless otherwise noted Symbol Test Conditions 5.7 A, dI/dt = 100 A/µ Si7812DN Vishay Siliconix Min. Typ °C = 3 ° Max. Unit 1 www.vishay.com 3 Datasheet pdf - http://www ...

Page 4

... Si7812DN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.0 0.4 0 Drain-to-Source Voltage (V) DS Output Characteristics 0.040 0.036 0.032 0.028 0.024 0.020 Drain Current (A) D On-Resistance vs. Drain Current and Gate Voltage 7 ...

Page 5

... Limited DS(on 0.1 0. °C A Single Pulse 0.001 0 Drain-to-Source Voltage ( minimum V at which Safe Operating Area, Junction-to-Ambient Si7812DN Vishay Siliconix 0. 0. 125 °C J 0.06 0.05 0. °C J 0.03 0. Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage ...

Page 6

... Si7812DN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Package Limited Case Temperature ( C Current Derating* * The power dissipation P is based dissipation limit for cases where additional heatsinking is used used to determine the current rating, when this rating falls below the package limit ...

Page 7

... S-83050-Rev. D, 29-Dec- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 0. Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Si7812DN Vishay Siliconix Notes Duty Cycle Per Unit Base = R ...

Page 8

... TYP. 2.3 TYP. 3.30 3.40 3.05 3.15 1.60 1.73 1.85 1.98 0.34 TYP. 0.65 BSC 0.86 TYP 0.41 0.51 0.43 0.56 0.13 0.20 - 12° 0.25 0.36 0.125 TYP. Package Information Vishay Siliconix Backside View of Single Pad Backside View of Dual Pad INCHES MIN. NOM. MAX. 0.038 0.041 0.044 0.000 - 0.002 0.009 ...

Page 9

... To take the advantage of the single PowerPAK 1212-8’s thermal performance see Application Note 826, Recommended Minimum Pad Patterns With Outline Drawing Access for Vishay Siliconix MOSFETs. Click on the PowerPAK 1212-8 single in the index of this document. In this figure, the drain land pattern is given to make full contact to the drain pad on the PowerPAK package ...

Page 10

... Application Note 826, Recommended Minimum Pad Patterns With Outline Drawing Access for Vishay Siliconix MOSFETs. Click on the PowerPAK 1212-8 dual in the index of this doc- ument. The gap between the two drain pads is 10 mils. This matches the spacing of the two drain pads on the Pow- erPAK 1212-8 dual package ...

Page 11

... A subsequent experiment was run where the copper on the back-side was reduced, first stripes to mimic circuit traces, and then totally removed. No signif- icant effect was observed. whereas a rise DS(ON) as high DS(ON) AN822 Vishay Siliconix TSOP-8 PPAK 1212 PPAK SO-8 Dual Single Dual Single 90 2.4 5 ...

Page 12

... AN822 Vishay Siliconix 105 Spreading Copper (sq. in 0.00 0.25 0.50 0.75 Figure 5. Spreading Copper - Si7401DN CONCLUSIONS As a derivative of the PowerPAK SO-8, the PowerPAK 1212-8 uses the same packaging technology and has been shown to have the same level of thermal perfor- mance while having a footprint that is more than 40 % smaller than the standard TSSOP-8 ...

Page 13

... Return to Index Return to Index Document Number: 72597 Revision: 21-Jan-08 ® 1212-8 Single 0.152 (3.860) 0.039 0.068 (0.990) (1.725) 0.025 (0.635) Recommended Minimum Pads Dimensions in Inches/(mm) Application Note 826 Vishay Siliconix 0.010 (0.255) 0.030 (0.760) www.vishay.com 7 Datasheet pdf - http://www.DataSheet4U.net/ ...

Page 14

... Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’ ...

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