SI7812DN Vishay Siliconix, SI7812DN Datasheet - Page 5

• Manufacturer Part Number: SI7812DN
• Description: N-Channel 75-V (D-S) MOSFET
• Manufacturer: Vishay Siliconix

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 73332
S-83050-Rev. D, 29-Dec-08
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
30
10
1
- 50
0.00
Source-Drain Diode Forward Voltage
- 25
0.2
V
0
SD
T
J
Threshold Voltage
- Source-to-Drain Voltage (V)
T
= 150 °C
0.4
J
25
- Temperature (°C)
50
0.6
I
D
75
= 250 µA
0.8
0.001
T
0.01
100
100
J
0.1
10
= 25 °C
1
0.1
Safe Operating Area, Junction-to-Ambient
* V
1.0
125
Limited by R
Single Pulse
GS
T
A
= 25 °C
V
1.2
150
minimum V
DS
- Drain-to-Source Voltage (V)
DS(on)
1
GS
*
at which R
BVDSS Limited
DS(on)
0.08
0.07
0.06
0.05
0.04
0.03
0.02
10
50
40
30
20
10
0
0.01
0
is specified
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0.1
2
V
GS
100
10 s
100 µs
10 ms
100 ms
1 s
1 ms
DC
- Gate-to-Source Voltage (V)
4
1
Time (s)
Vishay Siliconix
10
6
T
Si7812DN
J
T
= 125 °C
J
I
= 25 °C
D
www.vishay.com
= 7.2 A
100
8
1000
10
5
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