CEM4412 Chino Excel Technology, CEM4412 Datasheet - Page 3

• Manufacturer Part Number: CEM4412
• Description: N-channel Enhancement Mode Field Effect Transistor SO8 Package
• Manufacturer: Chino Excel Technology

ELECTRICAL CHARACTERISTICS (T
Notes
a.Surface Mounted on FR4 Board, t 10sec.
b.Pulse Test:Pulse Width 300 s, Duty Cycle 2%.
c.Guaranteed by design, not subject to production testing.
Diode Forward Voltage
DRAIN-SOURCE DIODE CHARACTERISTICS
Parameter
1800
1500
1200
900
600
300
25
20
15
10
5
0
0
Figure 1. Output Characteristics
0
0
V
V
DS
DS
Figure 3. Capacitance
0.5
5
, Drain-to Source Voltage (V)
, Drain-to-Source Voltage (V)
10
1.0
15
1.5
Coss
Ciss
Crss
V
GS
20
2.0
=10,8,6,5V
Symbol
V
V
GS
V
2.5
GS
25
=3V
SD
=4V
A
=25 C unless otherwise noted)
3.0
30
5-31
b
V
GS
Condition
Figure 4. On-Resistance Variation with
0.06
0.05
0.04
0.03
0.02
0.01
= 0V, Is = 2.0A
30
24
18
12
0
6
0
0.0
0
Figure 2. Transfer Characteristics
Drain Current and Temperature
V
1.0
V
GS
CEM4412
GS
, Gate-to-Source Voltage (V)
I
=10V
5
D
Tj=125 C
, Drain Current(A)
2.0
10
3.0
Min Typ Max Unit
4.0
-55 C
25 C
15
0.76 1.1
Tj=125 C
5.0
-55 C
25 C
C
6.0
20
V
5