CEM4412 Chino Excel Technology, CEM4412 Datasheet - Page 4

• Manufacturer Part Number: CEM4412
• Description: N-channel Enhancement Mode Field Effect Transistor SO8 Package
• Manufacturer: Chino Excel Technology

5
CEM4412
Figure 7. Transconductance Variation
1.09
1.06
1.03
1.00
0.97
0.94
0.91
10
Figure 5. Gate Threshold Variation
25
20
15
10
8
6
4
2
0
5
0
-50 -25
0
0
I
V
I
Tj, Junction Temperature ( C)
DS
D
3
DS
Figure 9. Gate Charge
=2A
with Drain Current
Qg, Total Gate Charge (nC)
, Drain-Source Current (A)
V
=15V
DS
0
with Temperature
6
5
=15V
25
9
50
10
12 15
75 100 125 150
V
I
D
DS
=250 A
15
18 21 24
=V
GS
20
5-32
Figure 6. Breakdown Voltage Variation
Figure 8. Body Diode Forward Voltage
0.03
30.0
10.0
1.15
1.10
1.05
1.00
0.95
0.90
0.85
1.0
0.1
50
10
1
-50 -25
0.4
0.1
ID=-250 A
Figure 10. Maximum Safe
V
Tj, Junction Temperature ( C)
Variation with Source Current
SD
Single Pulse
with Temperature
, Body Diode Forward Voltage (V)
V
0.6
T
V
GS
A
DS
=25 C
0
=10V
, Drain-Source Voltage (V)
1
25
0.8
Operating Area
50
1.0
75 100 125 150
10
1.2
30 50
1.4