BGA2712 Philips Semiconductors (Acquired by NXP), BGA2712 Datasheet - Page 2

• Manufacturer Part Number: BGA2712
• Description: BGA2712; Mmic Wideband Amplifier;; Package: SOT363 (UMT6)
• Manufacturer: Philips Semiconductors (Acquired by NXP)

Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
Silicon Monolithic Microwave Integrated Circuit (MMIC)
wideband amplifier with internal matching circuit in a 6-pin
SOT363 SMD plastic package.
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134)
2002 Sep 10
V
I
NF
P
V
I
P
T
T
P
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
S
S
SYMBOL
s
SYMBOL
stg
j
Internally matched to 50
Wide frequency range (3.2 GHz at 3 dB bandwidth)
Flat 21 dB gain (DC to 2.6 GHz at 1 dB flatness)
5 dBm saturated output power at 1 GHz
Good linearity (11 dBm IP3
Unconditionally stable (K > 1.5).
LNB IF amplifiers
Cable systems
ISM
General purpose.
S
L(sat)
S
tot
D
MMIC wideband amplifier
21
2
DC supply voltage
DC supply current
insertion power gain
noise figure
saturated load power
DC supply voltage
supply current
total power dissipation
storage temperature
operating junction temperature
maximum drive power
PARAMETER
PARAMETER
(out)
at 1 GHz)
CAUTION
f = 1 GHz
f = 1 GHz
f = 1 GHz
RF input AC coupled
T
s
2
PINNING
90 C
Marking code: E2-.
CONDITIONS
CONDITIONS
PIN
2, 5
Fig.1 Simplified outline (SOT363) and symbol.
1
3
4
6
Top view
1
6
V
GND2
RF out
GND1
RF in
S
5
2
4
3
MAM455
DESCRIPTION
5
12.3
21.3
3.9
4.8
65
TYP.
MIN.
6
Product specification
4
6
6
35
200
+150
150
10
MAX.
MAX.
BGA2712
1
2, 5
3
V
mA
dB
dB
dBm
V
mA
mW
dBm
C
C
UNIT
UNIT