BGA2712 Philips Semiconductors (Acquired by NXP), BGA2712 Datasheet - Page 3

• Manufacturer Part Number: BGA2712
• Description: BGA2712; Mmic Wideband Amplifier;; Package: SOT363 (UMT6)
• Manufacturer: Philips Semiconductors (Acquired by NXP)

Philips Semiconductors
THERMAL CHARACTERISTICS
CHARACTERISTICS
V
2002 Sep 10
R
I
R
R
NF
BW
K
P
P
IP3
IP3
S
S
SYMBOL
SYMBOL
s
s
L(sat)
L 1 dB
th j-s
L IN
L OUT
MMIC wideband amplifier
21
12
= 5 V; I
(in)
(out)
2
2
S
= 12.3 mA; T
thermal resistance from junction to
solder point
supply current
insertion power gain
return losses input
return losses output
isolation
noise figure
bandwidth
stability factor
saturated load power
load power
input intercept point
output intercept point
PARAMETER
j
= 25 C; unless otherwise specified.
PARAMETER
f = 100 MHz
f = 1 GHz
f = 1.8 GHz
f = 2.2 GHz
f = 2.6 GHz
f = 3 GHz
f = 1 GHz
f = 2.2 GHz
f = 1 GHz
f = 2.2 GHz
f = 1.6 GHz
f = 2.2 GHz
f = 1 GHz
f = 2.2 GHz
at s
f = 1 GHz
f = 2.2 GHz
f = 1 GHz
f = 2.2 GHz
at 1 dB gain compression; f = 1 GHz
at 1 dB gain compression; f = 2.2 GHz
f = 1 GHz
f = 2.2 GHz
f = 1 GHz
f = 2.2 GHz
21
2
3 dB below flat gain at 1 GHz 2.8
CONDITIONS
P
tot
3
= 200 mW; T
CONDITIONS
s
90 C
9
20
20
20
20
19
16
12
8
17
15
31
36
1.5
2.5
3
0
9
4
2
4
12
14
MIN.
12.3
20.8
21.3
22
22
21.2
19.3
14
10
20
18
33
39
3.9
4.3
3.2
2
3
4.8
1.3
0.2
11
6
2
10
16
TYP.
Product specification
15
22
22
23
23
22
21
4.3
4.7
VALUE
MAX.
BGA2712
300
mA
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
GHz
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
UNIT
UNIT
K/W