MA3S781E Panasonic, MA3S781E Datasheet
MA3S781E
Manufacturer Part Number
MA3S781E
Description
Silicon epitaxial planar type (cathode common)
Manufacturer
Panasonic
Datasheet
1.MA3S781E.pdf
(2 pages)
Schottky Barrier Diodes (SBD)
MA3S781E
Silicon epitaxial planar type (cathode common)
For high-speed switching circuits
I Features
I Absolute Maximum Ratings T
I Electrical Characteristics T
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
• SS-mini type 3-pin package
• Allowing high-density mounting
• Cathode common type
Reverse voltage (DC)
Peak reverse voltage
Average forward
current
Peak forward
current
Junction temperature
Storage temperature
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time
Detection efficiency
2. Rated input/output frequency: 2 000 MHz
3. * : t
human body and the leakage of current from the operating equipment.
Parameter
Parameter
rr
measuring circuit
Single
Double
Single
Double
*
Pulse Generator
(PG-10N)
R
s
= 50 Ω
Symbol
V
I
T
V
Bias Application Unit N-50BU
I
T
FM
RM
stg
F
R
a
j
A
Symbol
= 25°C ± 3°C
V
V
C
a
I
t
η
R
rr
F1
F2
t
= 25°C
−55 to +125
W.F.Analyzer
(SAS-8130)
R
i
= 50 Ω
Rating
150
110
125
30
30
30
20
V
I
I
V
I
I
V
R
F
F
F
rr
L
R
R
in
= 1 mA
= 30 mA
= I
= 1 mA, R
= 3.9 kΩ, C
= 30 V
= 1 V, f = 1 MHz
= 3 V
R
= 10 mA
(peak)
Unit
mA
mA
°C
°C
V
V
Conditions
L
, f = 30 MHz
= 100 Ω
L
= 10 pF
V
R
t
r
Input Pulse
10%
t
t
δ = 0.05
p
r
90%
= 0.35 ns
= 2 µs
t
p
Marking Symbol: M2R
Internal Connection
t
I
F
I
I
R
Min
Output Pulse
F
R
L
= 10 mA
= 10 mA
= 100 Ω
1
2
1
2
t
I
rr
0.80
rr
SS-Mini Type Package (3-pin)
= 1 mA
0.44
Typ
1.60 ± 0.1
0.88
1.5
1.0
65
t
+ 0.05
− 0.03
0.44
0.80 ± 0.05
Max
1.0
0.4
1.0
3
3
1 : Anode 1
2 : Anode 2
3 : Cathode
Unit : mm
Unit
µA
pF
ns
%
V
V
1
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MA3S781E Summary of contents
Page 1
... Schottky Barrier Diodes (SBD) MA3S781E Silicon epitaxial planar type (cathode common) For high-speed switching circuits I Features • SS-mini type 3-pin package • Allowing high-density mounting • Cathode common type I Absolute Maximum Ratings T Parameter Symbol Reverse voltage (DC) Peak reverse voltage V Single Average forward ...
Page 2
... MA3S781E 75°C 25° 125°C − 20° −1 10 − 0.2 0.4 0.6 0.8 1.0 1 Forward voltage V F −1 10 −2 10 − 120 160 200 ( °C ) Ambient temperature Schottky Barrier Diodes (SBD) ...