MA3S781E Panasonic, MA3S781E Datasheet - Page 2

no-image

MA3S781E

Manufacturer Part Number
MA3S781E
Description
Silicon epitaxial planar type (cathode common)
Manufacturer
Panasonic
Datasheet
2
MA3S781E
10
10
10
10
10
10
10
10
10
10
−1
−2
−1
−2
1
1
3
2
−40
3
2
0
Ambient temperature T
0.2
Forward voltage V
0
T
0.4
40
a
= 125°C
I
I
F
R
 V
0.6
 T
80
V
R
120
F
75°C 25°C
0.8
a
= 30 V
F
10 V
1 V
a
( V )
160
1.0
− 20°C
( °C )
200
1.2
3.0
2.5
2.0
1.5
1.0
0.5
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
−40
0
Ambient temperature T
Reverse voltage V
5
0
10
40
V
C
t
F
 V
15
 T
80
I
R
a
120
20
F
= 30 mA
R
3 mA
1 mA
a
( V )
160
25
( °C )
Schottky Barrier Diodes (SBD)
200
30
1 000
10
10
300
100
10
10
0.3
0.1
30
10
10
−1
−2
3
1
0.03
1
3
2
0
0.1
Reverse voltage V
5
Pulse width t
0.3
I
F(surge)
10
I
R
 V
1
15
 t
W
3
R
20
W
R
( ms )
T
t
T
a
W
10
a
= 25°C
( V )
= 125°C
I
25
F ( surge )
75°C
25°C
30
30

Related parts for MA3S781E