MTSF2P03HD ON Semiconductor, MTSF2P03HD Datasheet
MTSF2P03HD
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MTSF2P03HD Summary of contents
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... Source 1 2 Source Source 3 Gate 4 Top View ORDERING INFORMATION Device Package MTSF2P03HDR2 Micro8 Preferred devices are recommended choices for future use and best overall value. 1 Publication Order Number: MARKING DIAGRAM Drain 7 Drain Drain 6 Drain 5 Shipping 4000 Tape & Reel MTSF2P03HD/D ...
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... Single Pulse Drain–to–Source Avalanche Energy – Starting Vdc Vdc, Peak 3.0 Apk 159 mH Repetitive rating; pulse width limited by maximum junction temperature. Figure 1. 1, Square FR–4 or G–10 PCB MTSF2P03HD Rating Thermal Resistance – Junction to Ambient Total Power Dissipation @ Linear Derating Factor Drain Current – ...
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... Reverse Recovery Stored Charge 2. Pulse Test: Pulse Width 300 s, Duty Cycle 3. Switching characteristics are independent of operating junction temperature. 4. Reflects typical values. Max limit – Typ SIGMA MTSF2P03HD ( unless otherwise noted) Symbol (Cpk 2.0) (Notes 2. & 4.) V (BR)DSS I DSS ...
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... TYPICAL ELECTRICAL CHARACTERISTICS Figure 3. On–Region Characteristics Figure 5. On–Resistance versus Gate–to–Source Voltage Figure 7. On–Resistance Variation with Temperature MTSF2P03HD Figure 4. Transfer Characteristics Figure 6. On–Resistance versus Drain Current and Gate Voltage Figure 8. Drain–to–Source Leakage Current versus Voltage http://onsemi ...
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... RC network. The equations are: t d(on iss /(V GG – V GSP )] t d(off iss GSP ) MTSF2P03HD POWER MOSFET SWITCHING The capacitance (C iss ) is read from the capacitance curve at a voltage corresponding to the off–state condition when calculating t d(on) and is read at a voltage corresponding to the on– ...
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... The mechanisms at work are finite irremovable circuit parasitic inductances and capacitances acted upon by Figure 12. Diode Forward Voltage versus Current MTSF2P03HD Figure 11. Resistive Switching Time Variation versus Gate Resistance high di/dts. The diode’s negative di/dt during directly controlled by the device clearing the stored charge ...
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... A power MOSFET designated E–FET can be safely used in switching circuits with unclamped inductive loads. For Figure 14. Maximum Rated Forward Biased Safe Operating Area MTSF2P03HD Figure 13. Reverse Recovery Time ( SAFE OPERATING AREA reliable operation, the stored energy from circuit inductance dissipated in the transistor while in avalanche must be less than the rated limit and must be adjusted for operating conditions differing from those specified ...
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... MTSF2P03HD TYPICAL ELECTRICAL CHARACTERISTICS Figure 16. Thermal Response Figure 17. Diode Reverse Recovery Waveform http://onsemi.com 8 ...
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... When using infrared heating with the reflow soldering method, the difference shall be a maximum MTSF2P03HD interface between the board and the package. With the correct pad geometry, the packages will self–align when subjected to a solder reflow process. ...
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... C 150 C 100 TIME ( MINUTES TOTAL) MTSF2P03HD TYPICAL SOLDER HEATING PROFILE temperature versus time. The line on the graph shows the actual temperature that might be experienced on the surface of a test board at or near a central solder joint. The two profiles are based on a high density and a low density board ...
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... FEED DIRECTION NOTES: 1. CONFORMS TO EIA–481–1. 2. CONTROLLING DIMENSION: MILLIMETER. 330.0 (13.20) MAX. NOTES: 1. CONFORMS TO EIA–481–1. 2. CONTROLLING DIMENSION: MILLIMETER. 3. INCLUDES FLANGE DISTORTION AT OUTER EDGE. 4. DIMENSION MEASURED AT INNER HUB. MTSF2P03HD TAPE & REEL INFORMATION 2.05 (.080) 1.95 (.077 8.10 (.318) 7.90 (.312) 5.40 (.212) 5.20 (.205) SECTION B– ...
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... JAPAN: ON Semiconductor, Japan Customer Focus Center 4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031 Phone: 81–3–5740–2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. http://onsemi.com 12 then Dial 866–297–9322 MTSF2P03HD/D ...