HY29LV160 Hynix Semiconductor, HY29LV160 Datasheet

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HY29LV160

Manufacturer Part Number
HY29LV160
Description
16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory
Manufacturer
Hynix Semiconductor
Datasheet

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KEY FEATURES
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Preliminary
Revision 1.2, May 2001
– Read, program and erase operations from
– Ideal for battery-powered applications
– 70, 80, 90 and 120 ns access time
Values At 5 Mhz)
– Automatic sleep mode current: 1 µA
– Standby mode current: 1 µA
– Read current: 9 mA
– Program/erase current: 20 mA
– One 16 KB, two 8 KB, one 32 KB and
– One 8 KW, two 4 KW, one 16 KW and
– Top or bottom boot block configurations
– Allows locking of a sector or sectors to
– Sectors lockable in-system or via
– Temporary Sector Unprotect allows
– Sector erase time: 0.25 sec typical for
– Chip erase time: 8 sec typical
– Byte program time: 9 µs typical
– Reduces programming time when issuing
and Erases Any Combination of Sectors
or the Entire Chip
– Suspends an erase operation to allow
– Erase Resume can then be invoked to
Verifies Data at Specified Addresses
Single Power Supply Operation
High Performance
Ultra-low Power Consumption (Typical
Flexible Sector Architecture:
Sector Protection
Fast Program and Erase Times
Unlock Bypass Program Command
Automatic Erase Algorithm Preprograms
Erase Suspend/Erase Resume
Automatic Program Algorithm Writes and
2.7 to 3.6 volts
versions
thirty-one 64 KB sectors in byte mode
thirty-one 32 KW sectors in word mode
available
prevent program or erase operations
within that sector
programming equipment
changes in locked sectors (requires high
voltage on RESET# pin)
each sector
multiple program command sequences
reading data from, or programming data
to, a sector that is not being erased
complete suspended erasure
16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory
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LOGIC DIAGRAM
– Provide software confirmation of
– Provides hardware confirmation of
Device to Reading Array Data
Interface (CFI) Specification
– Flash device parameters stored directly
– Allows software driver to identify and use
– Pinout and software compatible with
– Superior inadvertent write protection
– 48-pin TSOP and 48-ball FBGA packages
100,000 Write Cycles per Sector Minimum
Data# Polling and Toggle Bits
Ready/Busy# Pin
Hardware Reset Pin (RESET#) Resets the
Compliant With Common Flash Memory
Compatible With JEDEC standards
Space Efficient Packaging
2 0
completion of program and erase
operations
completion of program and erase
operations
on the device
a variety of different current and future
Flash products
single-power supply Flash devices
A[19:0]
C E #
O E #
W E #
R E S E T #
B Y T E #
D Q 1 5 / A - 1
DQ[14:8]
R Y / B Y #
DQ[7:0]
HY29LV160
8
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Related parts for HY29LV160

HY29LV160 Summary of contents

Page 1

... Pinout and software compatible with single-power supply Flash devices – Superior inadvertent write protection n Space Efficient Packaging – 48-pin TSOP and 48-ball FBGA packages LOGIC DIAGRAM 2 0 A[19: HY29LV160 8 DQ[7:0] 7 DQ[14: ...

Page 2

... HY29LV160 GENERAL DESCRIPTION The HY29LV160 Mbit, 3 volt-only, CMOS Flash memory organized as 2,097,152 (2M) bytes or 1,048,576 (1M) words that is available in 48- pin TSOP and 48-ball FBGA packages. Word- wide data (x16) appears on DQ[15:0] and byte- wide (x8) data appears on DQ[7:0]. The HY29LV160 can be programmed and erased ...

Page 3

... HY29LV160 DQ[15: ...

Page 4

... HY29LV160 PIN CONFIGURATIONS A 6 A[ A[3] A[15] 1 A[14] 2 A[13] 3 A[12] 4 A[11] 5 A[10] 6 A[9] 7 A[8] 8 A[19 RESET RY/BY# 15 A[18] 16 A[17] 17 A[7] 18 A[6] 19 A[5] 20 A[4] 21 A[3] 22 A[ 48-Ball FBGA (Top View, Balls Facing Down ...

Page 5

... Those are described in Table 4. Read Operation Data is read from the HY29LV160 by using stan- dard microprocessor read cycles while placing the byte or word address on the device’s address in- puts. The host system must drive the CE# and OE# pins LOW and drive WE# high for a valid read operation to take place ...

Page 6

... HY29LV160 Table 1. HY29LV160T (Top Boot Block) Memory Array Organization ...

Page 7

... Table 2. HY29LV160B (Bottom Boot Block) Memory Array Organization ...

Page 8

... Notes Don’t Care ( Address is A[19:0, -1] in Byte Mode and A[19:0] in Word Mode. 3. DQ[15] is the A[-1] input in Byte Mode (BYTE# = L). Table 4. HY29LV160 Bus Operations Requiring High Voltage ...

Page 9

... HY29LV160. Standby Operation When the system is not reading or writing to the device, it can place the HY29LV160 in the Standby mode. In this mode, current consumption is greatly reduced, and the data bus outputs are placed in the high impedance state, independent of the OE# input ...

Page 10

... RESET# pin and uses standard microprocessor bus cycle timing to implement sector protection. The flow chart in Figure 1 illustrates the algorithm. The HY29LV160 is shipped with all sectors un- protected possible to determine whether a sector is protected or unprotected. See the Elec- tronic ID Mode section for details. ...

Page 11

... A read cycle containing a sector address (SA) in A[19:12] and the address 0x02 in Word mode or 0x04 in Byte mode, returns 0x01 if that sec- tor is protected, or 0x00 unprotected. HY29LV160 SECTOR UNPROTECT ...

Page 12

... Table 5 summarizes the composition of the valid com- mand sequences implemented in the HY29LV160, and these sequences are fully described in Table 6 and in the sections that follow. Writing incorrect address and data values or writ- ing them in the improper sequence resets the HY29LV160 to the Read mode ...

Page 13

... Rev. 1.2/May 01 ID Electronic 6 HY29LV160 13 ...

Page 14

... HY29LV160 Notes for Table 6: 1. All values are in hexadecimal. DQ[15:8] are don’t care for unlock and command cycles. 2. All bus cycles are write operations unless otherwise noted. 3. Address is A[10:0] in Word mode and A[10:0, -1] in Byte mode. A[19:11] are don’t care except as follows: • ...

Page 15

... DQ[5] Error Exit Section) Programming Verified Last Word/Byte Done Unlock Bypass Mode PROGRAMMING GO TO ERROR HY29LV160 15 ...

Page 16

... HY29LV160 even if specified for erasure, is not affected by the sector erase operation. The Sector Erase command sequence starts the Automatic Erase algorithm, which preprograms and verifies the specified unprotected sectors for an all zero data pattern prior to electrical erase. The device then provides the required number of internally generated erase pulses and verifies cell erasure within the proper cell margins ...

Page 17

... The HY29LV160 requires a maximum of 20 µs to suspend the erase operation if the Erase Suspend command is issued during sector erasure. How- ever, if the command is written during the time- out, the time-out is terminated and the erase op- eration is suspended immediately ...

Page 18

... Electronic ID mode and return to reading ar- ray data. Query Command and Common Flash Inter- face (CFI) Mode The HY29LV160 is capable of operating in the Common Flash Interface (CFI) mode. This mode allows the host system to determine the manufac- turer of the device, its operating parameters, its configuration and any special command codes that the device may accept ...

Page 19

... HY29LV160 ...

Page 20

... WRITE OPERATION STATUS The HY29LV160 provides a number of facilities to determine the status of a program or erase op- eration. These are the RY/BY# (Ready/Busy#) pin and certain bits of a status word which can be read from the device during the programming and erase operations. Table 11 summarizes the sta- tus indications and further detail is provided in the subsections which follow ...

Page 21

... Valid Address (Note 1) Test for DQ[ for Erase Operation DQ[7] = Data? YES DQ[ YES Read DQ[7:0] at Valid Address (Note 1) Test for DQ[ for Erase Operation DQ[7] = Data? (Note 2) YES N O PROGRAM/ERASE PROGRAM/ERASE EXCEEDED TIME ERROR HY29LV160 [ ] ...

Page 22

... HY29LV160 START Read DQ[7:0] at Valid Address (Note 1) Read DQ[7:0] at Valid Address (Note DQ[6] Toggled (Note (Note 3) PROGRAM/ERASE Notes: 1. During programming, the program address. During sector erase, an address within any sector scheduled for erasure. 2. Recheck DQ[6] since toggling may stop at the same time as DQ[5] changes from ...

Page 23

... Note that the sector erase timer does not apply to the Chip Erase command. HARDWARE DATA PROTECTION The HY29LV160 provides several methods of pro- tection to prevent accidental erasure or program- ming which might otherwise be caused by spuri- ous system level signals during V power-down transitions, or from system noise ...

Page 24

... HY29LV160 ABSOLUTE MAXIMUM RATINGS ...

Page 25

... Typical (typical). ACC HY29LV160 ± µ µ A ± µ ...

Page 26

... HY29LV160 DC CHARACTERISTICS Zero Power Flash 500 Note: Addresses are switching at 1 MHz. Figure 11. I Current vs. Time (Showing Active and Automatic Sleep Currents) CC1 Note °C. Figure 12. Typical I 26 1000 1500 2000 Time in ns ...

Page 27

... 1.5 V HY29LV160 ...

Page 28

... HY29LV160 AC CHARACTERISTICS Read Operations ...

Page 29

... Figure 16. RESET# Timings HY29LV160 µ µ ...

Page 30

... HY29LV160 AC CHARACTERISTICS Word/Byte Configuration (BYTE CE# ...

Page 31

... 3.0 volts, 100,000 cycles. In addition, CC HY29LV160 µ s µ s µ ...

Page 32

... HY29LV160 AC CHARACTERISTICS Program Command Sequence (last two cycles Addresses 0x555 Data 0xA0 RY/BY Notes Program Address Program Data Commands shown are for Word mode operation shown only to illustrate t ...

Page 33

... Data = 0x10 for chip erase 0x30 measurement references. It cannot occur as shown during a valid command sequence. HY29LV160 Read Status Data (last two cycles Status ...

Page 34

... HY29LV160 AC CHARACTERISTICS t Addresses DQ[7] DQ[6: RY/BY# Notes Valid Address for reading Data# Polling status data (see Write Operation Status section). 2. Illustration shows first status cycle after command sequence, last status read cycle and array data read cycle. ...

Page 35

... VIDR HY29LV160 Erase Complete µ s µ s µ ...

Page 36

... HY29LV160 AC CHARACTERISTICS RESET# IH SA, A[6], Don't Care A[1], A[0] Sector Protect/Unprotect Data 0x60 Note: For Sector Protect For Sector Unprotect Figure 25. In-System Sector Protect and Unprotect Timings 36 Valid * Valid * Verify 0x60 0x40 ...

Page 37

... 3.0 volts, 100,000 cycles. In addition, CC HY29LV160 µ s µ ...

Page 38

... HY29LV160 AC CHARACTERISTICS 0x555 for Program 0x2AA for Erase Addresses Data 0xA0 for Program 0x55 for Erase RY/BY RESET# Notes program address program data Valid Address for reading program or erase status (see Write ...

Page 39

... º º HY29LV160 ...

Page 40

... HY29LV160 PACKAGE DRAWINGS Physical Dimensions TSOP48 - 48-pin Thin Small Outline Package (measurements in millimeters) Pin 1.20 MAX 0.25MM (0.0098") BSC 40 48 11.90 12.10 25 18.30 18.50 19.80 20. 0.50 0.70 0.95 1.05 0.50 BSC 0.05 0.15 0.08 0.20 0.10 0.21 Rev. 1.2/May 01 ...

Page 41

... 0.20 MIN Ø 0.30 ± 0.05 Ø 0.15 Ø 0.08 Rev. 1.2/May 01 9.00 ± 0.10 1.80 A1 CORNER ± 0.10 INDEX AREA 2.10 ± 0.10 C 5.60 BSC 0. HY29LV160 0. 8.00 ± 0.10 0. 0.10 C 0.76 TYP Seating Plane C 0. 4.00 BSC 0.80 TYP Pin A1 Index Mark 41 ...

Page 42

... APPENDIX rising edge of the same pulse. Verification of pro- tection is done as described in the Electronic ID Mode section and shown in the flow chart. The HY29LV160 is shipped with all sectors un- protected. Sector Unprotect The hardware sector unprotection feature re-en- ables both program and erase operations in pre- viously protected sectors ...

Page 43

... Increment TRYCNT Remove V Write Reset Command N O TRYCNT = 25? YES SECTOR PROTECT DEVICE FAILURE COMPLETE HY29LV160 µ µ µ s µ from A[ ...

Page 44

... HY29LV160 NOTE: All sectors must be previously protected. See Figure A1 CE RESET# = A[ Wait Figure A2 ...

Page 45

... AC CHARACTERISTICS A[19:12] A[0] A[1] A[6] t VIDR VIDR Data RESET Figure A3. Timings for Sector Protection Using Programming Equipment Rev. 1.2/May VIDR HY29LV160 0x01 45 ...

Page 46

... HY29LV160 AC CHARACTERISTICS A[19:12] A[0] A[1] A[6] t VIDR VIDR Data RESET Figure A4. Timings for Sector Unprotect Using Programming Equipment VIDR 0x00 Rev. 1.2/May 01 1 ...

Page 47

... The complete part number is formed by appending the Boot Block Location code and the suffix shown in the table to the Device Number. For example, the part number for a 90 ns, Industrial temperature range device in the TSOP package with the top boot block option is HY29LV160TT-90I. Rev. 1.2/May 01 ...

Page 48

... HY29LV160 © 2001 by Hynix Semiconductor America. All rights reserved. No part of this document may be copied or reproduced in any form or by any means without the prior written consent of Hynix Semiconductor Inc. or Hynix Semiconductor America (collec- tively “Hynix”). The information in this document is subject to change without notice ...

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