SB2202 Unisonic Technologies, SB2202 Datasheet - Page 2

• Manufacturer Part Number: SB2202
• Description: Medium Power LOW Voltage Transistor
• Manufacturer: Unisonic Technologies

SB2202
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Base Current
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain(Note 1)
Current Gain Bandwidth Product
Output Capacitance
Note 1: Pulse test: PW<300µs, Duty Cycle<2%
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified.)
CLASSIFICATION OF hFE2
RANGE
RANK
PARAMETER
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
PARAMETER
DC
PULSE
Tc=25°C
Ta=25°C
100 ~ 200
SYMBOL
V
V
h
h
I
I
Q
CE(sat)
BE(sat)
C
CBO
EBO
FE1
FE2
f
T
ob
SYMBOL
V
V
V
T
(Ta=25°C , unless otherwise specified )
I
Pc
T
CBO
CEO
EBO
I
CM
STG
I
B
C
J
I
I
V
V
V
V
V
V
C
C
CB
EB
CE
CE
CE
CB
=-2A, I
= -2A, I
= -3V, I
= -30V, I
= -2V, I
= -2V, I
= -5V, I
= -10V, I
TEST CONDITIONS
PNP EPITAXIAL SILICON TRANSISTOR
B
B
= -0.2A
= -0.2A
C
C
C
C
E
E
=0
= -20mA
= -1A
= -0.1A
=0
=0, f=1MHz
160 ~ 320
P
-40 ~ +150
RATINGS
+150
-0.6
-40
-30
10
-5
-3
-7
1
MIN
100
30
TYP
-0.3
-1.0
200
80
45
200 ~ 400
E
MAX
-0.5
-2.0
400
QW-R209-020,A
1
1
UNIT
°C
°C
W
V
V
V
A
A
2 of 4
UNIT
MHz
mA
mA
pF
V
V