BR211Series Philips Semiconductors (Acquired by NXP), BR211Series Datasheet

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BR211Series

Manufacturer Part Number
BR211Series
Description
Breakover Diode
Manufacturer
Philips Semiconductors (Acquired by NXP)
Datasheet
1.BR211SERIES.pdf (6 pages)
Philips Semiconductors
GENERAL DESCRIPTION
A range of bidirectional, breakover
diodes in a two terminal, surface
mounting, plastic envelope. These
devices feature controlled breakover
voltage and high holding current
together with high peak current
handling
application is transient overvoltage
protection in telecommunications
equipment.
OUTLINE - SOD106
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
THERMAL RESISTANCES
August 1996
Breakover diodes
SYMBOL PARAMETER
V
I
I
I
dI
P
P
T
T
T
SYMBOL PARAMETER
R
R
Z
TSM1
TSM2
2
t
stg
a
vj
th j-a
D
tot
TM
th j-sp
th j-a
T
/dt
Continuous voltage
Non repetitive peak current
Non repetitive on-state current
I
Rate of rise of on-state current
after V
Continuous dissipation
Peak dissipation
Storage temperature
Operating ambient temperature off-state
Overload junction temperature
Thermal resistance junction to
solder point
Thermal resistance junction to
ambient
Thermal impedance junction to
ambient
capability.
2
t for fusing
(BO)
turn-on
Typical
QUICK REFERENCE DATA
SYMBOL
V
I
I
H
TSM
(BO)
CONDITIONS
10/320 s impulse equivalent to
10/700 s, 1.6 kV voltage impulse
(CCITT K17)
half sine wave; t = 10 ms;
T
t
t
T
t
on-state
CONDITIONS
pcb mounted; minimum footprint
t
p
p
p
p
j
a
= 10 ms
= 10 s
= 1 ms; T
= 1 ms
= 70 ˚C prior to surge
= 25˚C
PARAMETER
BR211SM-140 to BR211SM-280
Breakover voltage
Holding current
Non-repetitive peak current
1
a
= 25˚C
SYMBOL
MIN.
MIN.
-
-
-
- 40
-
-
-
-
-
-
-
-
-
Preliminary specification
BR211SM series
MIN.
140
150
TYP.
2.62
100
-
-
75% of
V
MAX.
150
150
(BO)typ
1.1
1.2
40
15
50
50
70
MAX.
MAX.
280
12
40
-
-
-
Rev 1.100
UNIT
UNIT
A/ s
K/W
K/W
K/W
UNIT
A
˚C
˚C
˚C
W
W
mA
V
A
A
2
V
A
s

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BR211Series Summary of contents

Page 1

Philips Semiconductors Breakover diodes GENERAL DESCRIPTION A range of bidirectional, breakover diodes in a two terminal, surface mounting, plastic envelope. These devices feature controlled breakover voltage and high holding current together with high peak current handling capability. Typical application is ...

Page 2

Philips Semiconductors Breakover diodes STATIC CHARACTERISTICS ˚C unless otherwise stated j SYMBOL PARAMETER 1 V On-state voltage TM V Avalanche voltage (min) (BR) V Breakover voltage (max) (BO) S Temperature coefficient of V (br Holding ...

Page 3

Philips Semiconductors Breakover diodes BR211 ITSM / 100 Number of impulses Fig.3. Maximum permissible non-repetitive on-state current based on sinusoidal currents Hz; device triggered at the start of ...

Page 4

Philips Semiconductors Breakover diodes 100 typ Fig.9. Typical junction capacitance as a function of off-state voltage MHz; T August 1996 1000 100 BR211-140 BR211-280 10 1 0.1 ...

Page 5

Philips Semiconductors Breakover diodes MECHANICAL DATA Dimensions in mm Net Mass: 0.2 g 2.3 2.0 0.05 2.8 1.6 2.4 1.4 Notes 1. For mounting and soldering instructions refer to publication SC18 "SMD Footprint Design and Soldering Guidelines". Order code:9397 750 ...

Page 6

Philips Semiconductors Breakover diodes DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet ...

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