BR211Series Philips Semiconductors (Acquired by NXP), BR211Series Datasheet - Page 2

• Manufacturer Part Number: BR211Series
• Description: Breakover Diode
• Manufacturer: Philips Semiconductors (Acquired by NXP)

Philips Semiconductors
STATIC CHARACTERISTICS
T
DYNAMIC CHARACTERISTICS
T
1 Measured under pulsed conditions to avoid excessive dissipation
2 The minimum current at which the diode will remain in the on-state
3 The avalanche current required to switch the diode to the on-state
4 Measured at maximum recommended continuous voltage. Relative humidity < 65%.
August 1996
Breakover diodes
j
SYMBOL PARAMETER
V
V
V
S
I
I
I
j
SYMBOL PARAMETER
dV
C
H
S
D
Fig.1. Definition of breakover diode characteristics .
= 25 ˚C unless otherwise stated
= 25 ˚C unless otherwise stated
TM
(BR)
(BO)
(br)
3
2
4
j
D
1
/dt
On-state voltage
Avalanche voltage (min)
Breakover voltage (max)
Temperature coefficient of V
Holding current
Switching current
Off-state current
Linear rate of rise of off-state
voltage that will not trigger any
device
Off-state capacitance
current
IT
IH
ID
Symmetric BOD
VT
Symbol
VD
I(BR)
V(BR)
voltage
V(BO)
(BR)
IS
CONDITIONS
I
I
I
BR211SM-140
BR211SM-160
BR211SM-180
BR211SM-200
BR211SM-220
BR211SM-240
BR211SM-260
BR211SM-280
T
T
t
V
CONDITIONS
V
V
TM
(BR)
p
j
j
D
(DM)
D
= 100 s
= 25˚C
= 70˚C
= 85% V
= 0 V; f = 1 kHz to 1 MHz
= 2 A
I
S
= 10
, t
= 85% V
p
= 100 s
mA
2
(BR)min
(BR)min
Fig.2. Test waveform for high voltage impulse (I
, T
current
; T
100%
j
50%
90%
30%
= 70˚C
j
= 70 ˚C
0
according to CCITT vol IX-Rec K17.
10us
ITSM
MIN.
MIN.
123
140
158
176
193
211
228
246
150
100
10
-
-
-
-
-
700us
BR211SM series
Preliminary specification
TYP.
TYP.
+0.1
140
160
180
200
220
240
260
280
200
-
-
-
-
-
-
MAX.
MAX.
1000
2000
157
180
202
224
247
269
292
314
100
2.5
10
-
-
-
Rev 1.100
time
UNIT
UNIT
V/ s
%/K
mA
mA
mA
TSM1
pF
V
V
V
V
V
V
V
V
V
A
)