STB100NF04 ST Microelectronics, Inc., STB100NF04 Datasheet - Page 2

• Manufacturer Part Number: STB100NF04
• Description: N-channel 40V - 0.0043OHM - 120A TO-220/D2PAK/I2PAK STRIPFET%99 ii Power MOSFET
• Manufacturer: ST Microelectronics, Inc.

STP100NF04, STB100NF04, STB100NF04-1
ABSOLUTE MAXIMUM RATINGS
( ) Pulse width limited by safe operating area
(1) I
(2) Starting T
(#) Current Limited by Package
THERMAL DATA
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
2/15
Rthj-case
Rthj-amb
V
Rthj-pcb
Symbol
Symbol
dv/dt (1)
SD
R
E
V
I
(BR)DSS
V
I
DM
P
I
I
V
V
D
AS
GS(th)
DS(on)
T
DSS
GSS
DGR
TOT
I
T
T
stg
DS
GS
D
120A, di/dt 300A/µs, V
(#)
j
l
( )
(2)
j
= 25°C, I
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
Gate Threshold Voltage
Static Drain-source On
Resistance
Thermal Resistance Junction-case Max
Thermal Resistance Junction-pcb Max
Thermal Resistance Junction-ambient (Free air) Max
Maximum Lead Temperature For Soldering Purpose
Drain-source Voltage (V
Drain-gate Voltage (R
Gate- source Voltage
Drain Current (continuos) at T
Drain Current (continuos) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Peak Diode Recovery voltage slope
Single Pulse Avalanche Energy
Operating Junction Temperature
Storage Temperature
d
= 60A, V
Parameter
DS
DD
DD
= 0)
=30 V
V
GS
Parameter
(BR)DSS
= 0)
C
GS
= 25°C
GS
, T
= 20 k )
j
= 0)
T
C
C
JMAX.
= 25°C
= 100°C
I
V
V
V
V
V
D
DS
DS
GS
DS
GS
= 250 µA, V
= Max Rating
= Max Rating, T
= V
= ± 20V
= 10V, I
Test Conditions
GS
, I
D
D
= 50 A
GS
= 250µA
= 0
C
= 125 °C
TO-220 / I
See Curve on page 6
-55 to 175
Value
Min.
± 20
120
120
480
300
1.2
40
40
40
2
2
6
2
62.5
300
0.5
PAK / D
0.0043
Typ.
2
PAK
0.0046
Max.
±100
10
1
4
W/°C
Unit
V/ns
°C/W
°C/W
°C/W
Unit
°C
W
V
V
V
A
A
A
µA
µA
nA
J
°C
V
V