STB100NF04 ST Microelectronics, Inc., STB100NF04 Datasheet - Page 3

• Manufacturer Part Number: STB100NF04
• Description: N-channel 40V - 0.0043OHM - 120A TO-220/D2PAK/I2PAK STRIPFET%99 ii Power MOSFET
• Manufacturer: ST Microelectronics, Inc.

ELECTRICAL CHARACTERISTICS (CONTINUED)
DYNAMIC
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Symbol
Symbol
Symbol
Symbol
I
V
SDM
g
t
t
I
C
SD
C
C
d(on)
Q
Q
fs
d(off)
RRM
I
2. Pulse width limited by safe operating area.
Q
Q
SD
t
oss
t
t
iss
rss
rr
gs
gd
r
(1)
f
g
rr
(1)
(2)
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Turn-off Delay Time
Fall Time
Parameter
Parameter
Parameter
Parameter
V
V
R
(Resistive Load see, Figure 3)
V
V
(see, Figure 4)
V
R
(Resistive Load see, Figure 3)
I
I
V
(see test circuit, Figure 5)
V
SD
SD
DS
DD
DD
GS
DD
DD
G
G
DS
= 4.7
= 4.7
= 120 A, V
= 120 A, di/dt = 100A/µs
= 15 V
= 20 V, I
= 32V, I
= 10V
= 20 V, I
= 20V, T
= 25V, f = 1 MHz, V
Test Conditions
Test Conditions
Test Conditions
Test Conditions
,
V
V
I
D
STP100NF04, STB100NF04, STB100NF04-1
GS
D
GS
D
D
j
= 150°C
= 120 A,
GS
= 50 A
= 60 A
= 60 A
= 10 V
= 10 V
= 0
GS
= 0
Min.
Min.
Min.
Min.
5100
1300
Typ.
Typ.
Typ.
Typ.
150
160
220
110
185
35
35
35
80
50
75
5
Max.
Max.
Max.
Max.
150
120
480
1.3
Unit
Unit
Unit
Unit
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
S
V
A
A
A
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