STB20NM50 ST Microelectronics, Inc., STB20NM50 Datasheet

no-image

STB20NM50

Manufacturer Part Number
STB20NM50
Description
N-channel 500V - 0.20 Ohm - 20A TO-220/TO-220FP/D2PAK/I2PAK Mdmesh Power MOSFET
Manufacturer
ST Microelectronics, Inc.
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STB20NM50
Manufacturer:
ST
Quantity:
12 500
Part Number:
STB20NM50
Manufacturer:
ST
0
Part Number:
STB20NM50-1
Manufacturer:
ST
Quantity:
12 500
Part Number:
STB20NM50-1
Manufacturer:
ST
0
Part Number:
STB20NM50-1
Manufacturer:
ST
Quantity:
20 000
Part Number:
STB20NM50-1 STB25NM50N-1
Manufacturer:
ST
0
Part Number:
STB20NM50FD
Manufacturer:
ST
Quantity:
12 500
Part Number:
STB20NM50FD
Manufacturer:
ST
0
Part Number:
STB20NM50FD B20NM50FD
Manufacturer:
ST
0
Part Number:
STB20NM50FD-1
Manufacturer:
ST
Quantity:
12 500
Part Number:
STB20NM50FD-1
Manufacturer:
ST
Quantity:
20 000
Part Number:
STB20NM50T4
Manufacturer:
STMICRO
Quantity:
1 233
Company:
Part Number:
STB20NM50T4
Quantity:
9 000
DESCRIPTION
The MDmesh™ is a new revolutionary MOSFET tech-
nology that associates the Multiple Drain process with
the Company’s PowerMESH™ horizontal layout. The
resulting product has an outstanding low on-resis-
tance, impressively high dv/dt and excellent avalanche
characteristics. The adoption of the Company’s propri-
etary strip technique yields overall dynamic perfor-
mance that is significantly better than that of similar
competition’s products.
APPLICATIONS
The MDmesh™ family is very suitable for increasing
power density of high voltage converters allowing sys-
tem miniaturization and higher efficiencies.
ABSOLUTE MAXIMUM RATINGS
(•)Pulse width limited by safe operating area
August 2002
STP20NM50/FP
STB20NM50
STB20NM50-1
TYPICAL R
HIGH dv/dt AND AVALANCHE CAPABILITIES
100% AVALANCHE TESTED
LOW INPUT CAPACITANCE AND GATE CHARGE
LOW GATE INPUT RESISTANCE
TIGHT PROCESS CONTROL AND HIGH
MANUFACTURING YIELDS
Symbol
dv/dt(1)
I
DM
V
P
V
V
V
T
DGR
I
I
TOT
T
ISO
stg
DS
GS
D
D
TYPE
( )
j
N-CHANNEL 500V - 0.20
Drain-source Voltage (V
Drain-gate Voltage (R
Gate- source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Peak Diode Recovery voltage slope
Insulation Winthstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
DS
(on) = 0.20
500V
500V
500V
V
DSS
R
<0.25
<0.25
<0.25
DS(on)
C
GS
Parameter
= 25°C
GS
= 20 k )
= 0)
C
C
20 A
20 A
20 A
STP20NM50 - STP20NM50FP
= 25°C
= 100°C
I
STB20NM50 - STB20NM50-1
D
- 20A TO-220/FP/D
(1)I
(*)Limited only by maximum temperature allowed
SD
TO-220
MDmesh™Power MOSFET
20A, di/dt 400A/µs, V
INTERNAL SCHEMATIC DIAGRAM
STP(B)20NM50(-1)
12.6
192
1.2
20
80
--
(Tabless TO-220)
D
–65 to 150
DD
2
I²PAK
PAK
Value
500
500
±30
150
15
V
1
(BR)DSS
1 2
STP20NM50FP
3
2
3
PAK/I
12.6(*)
, T
20(*)
80(*)
2000
0.36
45
j
TO-220FP
T
JMAX.
2
PAK
1
W/°C
V/ns
Unit
1/12
2
°C
°C
W
V
V
V
A
A
A
V
3

Related parts for STB20NM50

Related keywords