STB20NM50 ST Microelectronics, Inc., STB20NM50 Datasheet - Page 2

• Manufacturer Part Number: STB20NM50
• Description: N-channel 500V - 0.20 Ohm - 20A TO-220/TO-220FP/D2PAK/I2PAK Mdmesh Power MOSFET
• Manufacturer: ST Microelectronics, Inc.

STP20NM50/FP/STB20NM50/STB20NM50-1
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (T
OFF
ON (1)
DYNAMIC
2/12
C
Rthj-case
Rthj-amb
V
Symbol
Symbol
Symbol
Symbol
R
oss eq.
V
(BR)DSS
g
I
I
C
DS(on)
C
E
GS(th)
C
fs
I
GSS
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. C
DSS
R
AR
T
oss
AS
rss
iss
(1)
g
l
V
DSS
oss eq.
(2)
.
is defined as a constant equivalent capacitance giving the same charging time as C
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
(starting T
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
Gate Threshold Voltage
Static Drain-source On
Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Equivalent Output
Capacitance
Gate Input Resistance
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
Parameter
Parameter
Parameter
j
DS
= 25 °C, I
= 0)
GS
= 0)
D
= 5 A, V
j
max)
Parameter
CASE
DD
I
V
V
V
V
V
V
I
V
f=1 MHz Gate DC Bias=0
Test Signal Level=20mV
Open Drain
D
D
V
DS
DS
GS
DS
GS
DS
GS
= 50 V)
DS
= 250 µA, V
= 10A
= 25 °C UNLESS OTHERWISE SPECIFIED)
= Max Rating
= Max Rating, T
= V
> I
= ±30V
= 10V, I
= 0V, V
= 25V, f = 1 MHz, V
D(on)
Test Conditions
Test Conditions
Test Conditions
GS
, I
DS
D
x R
D
= 10A
GS
= 250µA
= 0V to 400V
DS(on)max,
Max
Max
= 0
C
= 125 °C
TO-220/I²PAK/
GS
= 0
D²PAK
0.65
Min.
Min.
Min.
500
3
oss
62.5
300
when V
Max Value
1480
650
Typ.
Typ.
0.20
Typ.
285
130
1.6
10
10
34
TO-220FP
4
DS
2.8
increases from 0 to 80%
Max.
±100
Max.
Max.
0.25
10
1
5
°C/W
°C/W
Unit
Unit
Unit
Unit
mJ
µA
µA
°C
nA
pF
pF
pF
pF
A
V
V
S