SST25VF080-33-4C-QA Silicon Storage Technology, Inc., SST25VF080-33-4C-QA Datasheet - Page 18

• Manufacturer Part Number: SST25VF080-33-4C-QA
• Description: Voltage = 2.7 to 3.6 ;; Density = 8Mb ;; Organization = 1Mb X 8 ;; Speed = 0 - 20 MHZ ;; Temp. = Commercial ;; Package = Qfn/wson
• Manufacturer: Silicon Storage Technology, Inc.

Advance Information
TABLE 9: C
TABLE 10: R
TABLE 11: AC O
©2003 Silicon Storage Technology, Inc.
Parameter
C
C
Symbol
N
T
I
Symbol
F
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
LTH
DR
CLK
SCKH
SCKL
CES
CEH
CHS
CHH
CPH
CHZ
CLZ
DS
DH
HLS
HHS
HLH
HHH
HZ
LZ
OH
V
SE
BE
SCE
BP
OUT
IN
END
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
1. Relative to SCK.
1
1
1
1
1
1
1
1
1
APACITANCE (Ta = 25°C, f=1 Mhz, other pins open)
ELIABILITY
PERATING
Description
Output Pin Capacitance
Input Capacitance
Parameter
Endurance
Data Retention
Latch Up
Serial Clock Frequency
Serial Clock High Time
Serial Clock Low Time
CE# Active Setup Time
CE# Active Hold Time
CE# Not Active Setup Time
CE# Not Active Hold Time
CE# High Time
CE# High to High-Z Output
SCK Low to Low-Z Output
Data In Setup Time
Data In Hold Time
HOLD# Low Setup Time
HOLD# High Setup Time
HOLD# Low Hold Time
HOLD# High Hold Time
HOLD# Low to High-Z Output
HOLD# High to Low-Z Output
Output Hold from SCK Change
Output Valid from SCK
Sector-Erase
Block-Erase
Chip-Erase
Byte-Program
C
HARACTERISTICS
C
HARACTERISTICS
Parameter
Minimum Specification
18
100 + I
10,000
100
DD
Test Condition
Cycles
Units
Years
mA
Min
V
100
8 Mbit SPI Serial Flash
20
20
20
20
10
10
10
10
15
10
V
0
5
5
0
OUT
IN
= 0V
= 0V
Test Method
JEDEC Standard A117
JEDEC Standard A103
JEDEC Standard 78
Max
100
20
20
20
20
20
25
25
20
SST25VF080
S71250-00-000
Maximum
12 pF
6 pF
Units
MHz
T10.0 1250
T11.0 1250
ms
ms
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
T9.0 1250
10/03