BSP128 Philips Semiconductors (Acquired by NXP), BSP128 Datasheet - Page 2

• Manufacturer Part Number: BSP128
• Description: BSP128; N-channel Enhancement Mode Vertical D-mos Transistor
• Manufacturer: Philips Semiconductors (Acquired by NXP)

Philips Semiconductors
FEATURES
DESCRIPTION
N-channel enhancement mode
vertical D-MOS transistor in a
SOT223 envelope and intended for
use as a line current interruptor in
telephone sets and for applications in
relay, high-speed and line
transformer drivers.
PINNING - SOT223
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
THERMAL RESISTANCE
Note
1. Device mounted on an epoxy printed circuit board, 40 x 40 x 1.5 mm, mounting pad for the drain tab minimum 6 cm
April 1995
V
I
I
P
T
T
R
SYMBOL
D
DM
V
stg
j
Direct interface to C-MOS, TTL,
etc.
High-speed switching
No secondary breakdown.
DS
tot
th j-a
N-channel enhancement mode vertical
D-MOS transistor
PIN
GSO
1
2
3
4
SYMBOL
gate
drain
source
drain
Code: BSP128
drain-source voltage
gate-source voltage
DC drain current
peak drain current
total power dissipation
storage temperature range
junction temperature
DESCRIPTION
from junction to ambient (note 1)
PARAMETER
QUICK REFERENCE DATA
V
I
R
V
D
SYMBOL
DS
GS(th)
DS(on)
PARAMETER
handbook, halfpage
open drain
up to T
drain-source voltage
DC drain current
drain-source on-resistance
gate-source threshold voltage
Fig.1 Simplified outline (SOT223) and symbol.
2
Top view
amb
CONDITIONS
1
= 25 C (note 1)
PARAMETER
2
4
3
MAM054
g
THERMAL RESISTANCE
65
MIN.
d
s
Product specification
83.3 K/W
200
350
8
1.8
200
20
350
1.4
1.5
150
150
MAX.
MAX.
BSP128
V
mA
V
V
V
mA
A
W
UNIT
C
C
UNIT
2
.