BSP128 Philips Semiconductors (Acquired by NXP), BSP128 Datasheet - Page 3

• Manufacturer Part Number: BSP128
• Description: BSP128; N-channel Enhancement Mode Vertical D-mos Transistor
• Manufacturer: Philips Semiconductors (Acquired by NXP)

Philips Semiconductors
CHARACTERISTICS
T
April 1995
handbook, halfpage
V
I
V
R
C
C
C
Switching times (see Figs 2 and 3)
t
t
j
DSS
on
off
I
(BR)DSS
GS(th)
Y
= 25 C unless otherwise specified.
DS(on)
iss
oss
rss
N-channel enhancement mode vertical
D-MOS transistor
SYMBOL
GSS
V
fs
DD
= 50 V.
10 V
0 V
Fig.2 Switching times test circuit.
drain-source breakdown voltage
drain-source leakage current
gate-source leakage current
gate-source threshold voltage
drain-source on-resistance
transfer admittance
input capacitance
output capacitance
feedback capacitance
turn-on time
turn-off time
50
PARAMETER
V DD = 50 V
I D
MBB691
I
V
I
I
I
V
V
V
I
V
I
V
D
D
D
D
D
D
V
DS
DS
DS
DS
GS
GS
3
= 10 A; V
= 1 mA; V
= 100 mA; V
= 300 mA; V
= 250 mA; V
= 250 mA; V
GS
= 160 V; V
= 25 V; V
= 25 V; V
= 25 V; V
= 0 to 10 V
= 0 to 10 V
handbook, halfpage
= 20 V; V
CONDITIONS
INPUT
OUTPUT
GS
GS
GS
GS
GS
GS
GS
DS
DD
DD
DS
= V
Fig.3 Input and output waveforms.
= 0
= 0; f = 1 MHz
= 0; f = 1 MHz
= 0; f = 1 MHz
= 25 V
= 0
= 0
= 2.8 V
= 50 V;
= 50 V;
DS
10 %
t on
90 %
200
0.4
200
MIN.
90 %
5
400
50
20
5
5
20
Product specification
TYP. MAX. UNIT
t off
BSP128
1
100
1.8
8
80
30
10
10
30
MBB692
10 %
V
nA
V
mS
pF
pF
pF
ns
ns
A