2SD669 Hitachi Semiconductor (acquired by Renesas), 2SD669 Datasheet - Page 3

• Manufacturer Part Number: 2SD669
• Description: Silicon NPN Epitaxial
• Manufacturer: Hitachi Semiconductor (acquired by Renesas)

Electrical Characteristics (Ta = 25°C)
Item
Collector to base
breakdown voltage
Collector to emitter
breakdown voltage
Emitter to base
breakdown voltage
Collector cutoff current
DC current transfer ratio h
Collector to emitter
saturation voltage
Base to emitter voltage V
Gain bandwidth product f
Collector output
capacitance
Notes: 1. The 2SD669 and 2SD669A are grouped by h
2SD669
2SD669A
30
20
10
0
2. Pulse test.
Maximum Collector Dissipation
Case temperature T
B
60 to 120
60 to 120
50
Curve
Symbol
V
V
V
I
h
V
Cob
CBO
T
FE1
FE2
(BR)CBO
(BR)CEO
(BR)EBO
CE(sat)
BE
*
C
100 to 200
100 to 200
1
100
C
( C)
2SD669
Min
180
120
5
—
60
30
—
—
—
—
150
Typ
—
—
—
—
—
—
—
—
140
14
D
160 to 320
—
Max
—
—
—
10
320
—
1
1.5
—
—
FE1
Min
180
160
5
60
30
—
—
—
—
2SD669A
—
0.03
0.01
as follows.
1.0
0.3
0.1
3
1
Typ
—
—
—
—
—
—
—
—
140
14
DC Operation(T
Collector to emitter voltage V
3
Max
—
—
—
200
—
1
1.5
—
—
10
Area of Safe Operation
10
Unit
V
V
V
V
V
MHz
pF
C
A
2SD669, 2SD669A
= 25 C)
(13.3 V, 1.5 A)
2SD669
30
Test conditions
I
I
I
V
V
V
I
I
V
V
V
f = 1 MHz
C
C
E
C
B
CB
CE
CE
CE
CE
CB
(40 V, 0.5 A)
= 1 mA, I
= 50 mA*
= 1 mA, I
= 10 mA, R
= 500 mA,
= 160 V, I
= 5 V, I
= 5 V, I
= 5 V, I
= 5 V, I
= 10 V, I
100
CE
(120 V, 0.04 A)
(160 V, 0.02A)
(V)
C
C
C
C
C
E
2
300
E
= 150 mA*
= 500 mA*
= 150 mA*
= 150 mA*
2SD669A
= 0
= 0
E
BE
= 0,
= 0
=
3
2
2
2
2