2SB727 Hitachi Semiconductor (acquired by Renesas), 2SB727 Datasheet
2SB727
Available stocks
Related parts for 2SB727
2SB727 Summary of contents
Page 1
... Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value 2SB727(K) Silicon PNP Epitaxial 1 1. Base 2. Collector (Flange) 3. Emitter Symbol V CBO V CEO V EBO ...
Page 2
... Electrical Characteristics (Ta = 25°C) Item Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Turn on time Turn off time Note: 1. Pulse test Maximum Collector Dissipation Curve 60 40 ...
Page 3
... Collector current I DC Current Transfer Ratio vs. 10,000 3,000 1,000 300 100 –5 –0.1 (V) Switching Time vs. Collector Current 10 3 1.0 0.3 0.1 0.03 0.01 –3 –10 –0.1 –0.3 (mA) C 2SB727(K) Collector Current V = – –0.3 –1.0 –3 –10 Collector current I ( stg 500 I = –500 I ...
Page 4
... Transient Thermal Resistance 10 1-1,000 s 3 1-1,000 ms 1.0 0.3 0.1 0.03 0. 100 1 10 100 Time 1,000 (s) 1,000 (ms) ...
Page 5
MAX 10.16 0.2 9.5 8.0 1.5 MAX 0.76 2.54 0.5 2.54 +0.1 3.6 -0.08 0.1 0.5 0.5 Hitachi Code JEDEC EIAJ Weight (reference value) 4.44 0.2 1.26 0.15 2.7 MAX 0.1 TO-220AB Conforms Conforms 1.8 g Unit: mm ...
Page 6
Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise ...