2SB647 Renesas, 2SB647 Datasheet - Page 4

• Manufacturer Part Number: 2SB647
• Description: Small Signal General Purpose Transistor
• Manufacturer: Renesas

2SB647, 2SB647A
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Electrical Characteristics (Ta = 25°C)
Item
Collector to base
breakdown voltage
Collector to emitter
breakdown voltage
Emitter to base breakdown
voltage
Collector cutoff current
DC current transfer ratio
Collector to emitter
saturation voltage
Base to emitter voltage
Gain bandwidth product
Collector output capacitance Cob
Notes: 1. The 2SB647 and 2SB647A are grouped by h
2SB647
2SB647A
2. Pulse test
B
60 to 120
60 to 120
C
100 to 200
100 to 200
Symbol Min
V
V
V
I
h
h
V
V
f
CBO
T
FE1
FE2
(BR)CBO
(BR)CEO
(BR)EBO
CE(sat)
BE
*
1
2SB647
–120 —
–80
–5
—
60
30
—
—
—
—
Symbol
V
V
V
I
i
P
Tj
Tstg
C(peak)
C
CBO
CEO
EBO
C
D
160 to 320
—
Typ Max Min
—
—
—
—
—
—
—
140
20
—
—
—
–10
320
—
–1
–1.5 —
—
—
FE1
2SB647A
–120 —
–100 —
–5
—
60
30
—
—
—
2SB647
–120
–80
–5
–1
–2
0.9
150
–55 to +150
as follows.
Typ
—
—
—
—
—
—
140
20
Max Unit Test conditions
—
—
—
–10
200
—
–1
–1.5 V
—
—
2SB647A
–120
–100
–5
–1
–2
0.9
150
–55 to +150
V
V
V
V
MHz V
pF
A
I
I
I
V
V
I
V
I
I
I
V
I
V
f = 1 MHz
C
C
E
C
C
C
B
C
CB
CE
CE
CE
CE
CB
= –10 A, I
= –50 mA*
= –10 A, I
= –1 mA, R
= –150 mA*
= –500 mA*
= –500 mA,
= –150 mA*
= –100 V, I
= –5 V,
= –5 V,
= –5 V,
= –5 V, I
= –10 V, I
Unit
V
V
V
A
A
W
C
C
C
2
C
E
E
BE
= –150 mA
2
2
2
= 0
= 0
E
= 0
=
= 0