2SB649 Renesas, 2SB649 Datasheet - Page 4

• Manufacturer Part Number: 2SB649
• Description: Bipolar Power General Purpose Transistor
• Manufacturer: Renesas

2SB649, 2SB649A
4
30
20
10
0
–1.0
–0.8
–0.6
–0.4
–0.2
0
Maximum Collector Dissipation
Collector to emitter voltage V
Case temperature T
Typical Output Characteristics
–10
50
Curve
–20
100
I
B
–30
C
= 0
( C)
T
C
–40
CE
= 25 C
150
(V)
–50
–0.03
–0.01
–1.0
–0.3
–0.1
–3
–1
I
Cmax
Collector to emitter voltage V
DC Operation (T
–500
–100
–3
–10
–1
Area of Safe Operation
0
Base to emitter voltage V
Typical Transfer Characteristics
V
–10
CE
–0.2
= –5 V
(–13.3 V, –1.5 A)
C
= 25 C)
–30
–0.4
2SB649
(–40 V, –0.5 A)
–0.6
–100
CE
(V)
(–120 V, –0.038 A)
(–160 V, –0.02 A)
–0.8
BE
–300
2SB649A
(V)
–1.0