2SB727 Hitachi Semiconductor (acquired by Renesas), 2SB727 Datasheet - Page 2

• Manufacturer Part Number: 2SB727
• Description: Silicon PNP Epitaxial
• Manufacturer: Hitachi Semiconductor (acquired by Renesas)

2SB727(K)
Electrical Characteristics (Ta = 25°C)
Item
Collector to emitter breakdown
voltage
Emitter to base breakdown
voltage
Collector cutoff current
DC current transfer ratio
Collector to emitter saturation
voltage
Base to emitter saturation
voltage
Turn on time
Turn off time
Note:
2
60
40
20
0
1. Pulse test
Maximum Collector Dissipation Curve
Case Temperature T
50
100
C
Symbol
V
V
I
I
h
V
V
V
V
t
t
CBO
CEO
on
off
FE
(BR)CEO
(BR)EBO
CE(sat)1
CE(sat)2
BE(sat)1
BE(sat)2
( C)
Min
–120
–7
—
—
1000
—
—
—
—
—
—
150
Typ
—
—
—
—
—
—
—
—
—
1.0
3.0
–0.03
–1.0
–0.3
–0.1
–30
–10
Max
—
—
–100
–10
20000
–1.5
–3.0
–2.0
–3.5
—
—
–3
–1
I
i
Ta = 25 C
1 Shot pulse
C (peak)
C (max)
Collector to emitter Voltage V
Unit
V
V
V
V
V
V
–3
A
A
s
s
(Continuous)
Area of Safe Operation
–10
Test conditions
I
I
V
V
V
I
I
I
I
I
C
E
C
C
C
C
C
CB
CE
CE
= –50 mA, I
= –25 mA, R
= –3 A, I
= –6 A, I
= –3 A, I
= –6 A, I
= –3 A, I
= –120 V, I
= –100 V, R
= –3 V, I
–30
1 s
–100 –300 –1,000
B
B
B
B
B1
C
= –6 mA*
= –60 mA*
= –6 mA*
= –60 mA*
= –I
C
= –3 A*
E
BE
= 0
BE
CE
= 0
B2
=
=
= –6 mA
(V)
1
1
1
1
1