PDTA114E NXP Semiconductors, PDTA114E Datasheet - Page 5

• Manufacturer Part Number: PDTA114E
• Description: PNP resistor-equipped transistors
• Manufacturer: NXP Semiconductors

NXP Semiconductors
CHARACTERISTICS
T
2004 Aug 02
I
I
I
h
V
V
V
R1
C
SYMBOL
R2
------- -
R1
amb
CBO
CEO
EBO
FE
CEsat
i(off)
i(on)
PNP resistor-equipped transistors;
R1 = 10 kΩ, R2 = 10 kΩ
c
= 25 °C unless otherwise specified.
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage I
input-off voltage
input-on voltage
input resistor
resistor ratio
collector capacitance
PARAMETER
V
V
V
V
V
I
I
I
C
C
C
E
CB
CE
CE
EB
CE
= i
= −10 mA; I
= −100 μA; V
= −10 mA; V
= −5 V; I
= −50 V; I
= −30 V; I
= −30 V; I
= −5 V; I
e
= 0; V
5
CONDITIONS
CB
C
C
E
B
B
B
= 0
= −5 mA
CE
= −10 V; f = 1 MHz −
CE
= 0
= 0
= 0; T
= −0.5 mA
= −0.3 V
= −5 V
j
= 150 °C
−
−
−
−
30
−
−
−2.5
7
0.8
MIN.
PDTA114E series
−
−
−
−
−
−
−1.1
−1.8
10
1
−
TYP.
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Product data sheet
−100
−1
−50
−400
−
−150
−0.8
−
13
1.2
3
MAX.
nA
μA
μA
μA
mV
V
V
kΩ
pF
UNIT