PDTA123Y NXP Semiconductors, PDTA123Y Datasheet - Page 6
![no-image](/images/manufacturer_photos/0/4/487/nxp_semiconductors_sml.jpg)
PDTA123Y
Manufacturer Part Number
PDTA123Y
Description
PNP resistor-equipped transistors
Manufacturer
NXP Semiconductors
Datasheet
1.PDTA123Y.pdf
(18 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
PDTA123YE
Manufacturer:
NXP
Quantity:
60 000
Company:
Part Number:
PDTA123YE115
Manufacturer:
NXP Semiconductors
Quantity:
27 500
Company:
Part Number:
PDTA123YT
Manufacturer:
NXP
Quantity:
81 000
Company:
Part Number:
PDTA123YT
Manufacturer:
NXP
Quantity:
6 816
Part Number:
PDTA123YT
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Part Number:
PDTA123YT,215
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Company:
Part Number:
PDTA123YT215
Manufacturer:
NXP Semiconductors
Quantity:
27 000
Part Number:
PDTA123YU
Manufacturer:
NXP/恩智浦
Quantity:
20 000
NXP Semiconductors
PDTA123Y_SER_4
Product data sheet
Fig 1.
Fig 3.
V
h
(V)
I(on)
(1) T
(2) T
(3) T
10
(1) T
(2) T
(3) T
FE
10
10
10
10
1
1
3
2
1
10
10
V
DC current gain as a function of collector
current; typical values
V
On-state input voltage as a function of
collector current; typical values
amb
amb
amb
amb
amb
amb
CE
CE
1
1
= 5 V
= 0.3 V
= 100 C
= 25 C
= 40 C
= 40 C
= 25 C
= 100 C
1
1
(1)
(2)
(3)
10
10
(2)
I
I
C
C
(1)
(3)
006aaa103
(mA)
006aaa105
(mA)
Rev. 04 — 3 September 2009
10
10
2
2
PNP resistor-equipped transistors; R1 = 2.2 k , R2 = 10 k
Fig 2.
Fig 4.
V
V
CEsat
(V)
(V)
I(off)
10
10
(1) T
(2) T
(3) T
10
(1) T
(2) T
(3) T
10
1
1
1
2
1
10
I
Collector-emitter saturation voltage as a
function of collector current; typical values
V
Off-state input voltage as a function of
collector current; typical values
1
C
amb
amb
amb
amb
amb
amb
CE
/I
1
B
= 5 V
= 20
= 100 C
= 25 C
= 40 C
= 40 C
= 25 C
= 100 C
PDTA123Y series
10
1
(1)
(2)
(3)
(1)
(2)
(3)
I
I
C
C
(mA)
(mA)
© NXP B.V. 2009. All rights reserved.
www.DataSheet4U.com
006aaa104
006aaa106
10
10
2
6 of 18