MT18LD272A Micron Technology, MT18LD272A Datasheet - Page 11

• Manufacturer Part Number: MT18LD272A
• Description: (MT18LD272A / MT18LD472A) NONBUFFERED DRAM DIMMs
• Manufacturer: Micron Technology

OBSOLETE
2, 4 Meg x 72 Nonbuffered DRAM DIMMs
DM60.p65 – Rev. 6/98
FAST PAGE MODE
AC ELECTRICAL CHARACTERISTICS
(Notes: 5, 6, 7, 8, 9, 12, 29) (V
AC CHARACTERISTICS - FAST PAGE MODE OPTION
PARAMETER
FAST-PAGE-MODE READ-WRITE cycle time
Access time from RAS#
RAS# to column-address delay time
Row-address hold time
RAS# pulse width
RAS# pulse width (FAST PAGE MODE)
Random READ or WRITE cycle time
RAS# to CAS# delay time
READ command hold time (referenced to CAS#)
READ command setup time
Refresh period (2,048 cycles)
RAS# precharge time
RAS# to CAS# precharge time
READ command hold time (referenced to RAS#)
RAS# hold time
READ-WRITE cycle time
RAS# to WE# delay time
WRITE command to RAS# lead time
Transition time (rise or fall)
WRITE command hold time
WRITE command hold time (referenced to RAS#)
WE# command setup time
WRITE command pulse width
WE# hold time (CBR Refresh)
WE# setup time (CBR Refresh)
DD
= +3.3V 0.3V)
11
SYMBOL
NONBUFFERED DRAM DIMMs
t
t
PRWC
RASP
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
RWC
RWD
WCH
WCR
WCS
WRH
WRP
RWL
RAC
RAD
RAH
RAS
RCD
RCH
RCS
RPC
RRH
RSH
t
t
REF
t
Micron Technology, Inc., reserves the right to change products or specifications without notice.
WP
RC
RP
t
T
MIN
110
155
85
15
10
60
60
20
40
15
85
15
10
45
10
10
10
0
0
0
0
2
0
-6
125,000
10,000
MAX
60
32
50
2, 4 MEG x 72
UNITS
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
1998, Micron Technology, Inc.
NOTES
13
17
16
18
18
23
23