MT18LD272A Micron Technology, MT18LD272A Datasheet - Page 9

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MT18LD272A

Manufacturer Part Number
MT18LD272A
Description
(MT18LD272A / MT18LD472A) NONBUFFERED DRAM DIMMs
Manufacturer
Micron Technology
Datasheet
OBSOLETE
I
(Notes: 1, 5, 6) (V
* EDO version only
2, 4 Meg x 72 Nonbuffered DRAM DIMMs
DM60.p65 – Rev. 6/98
CC
PARAMETER/CONDITION
STANDBY CURRENT: TTL
(RAS# = CAS# = V
STANDBY CURRENT: CMOS
(RAS# = CAS# = V
OPERATING CURRENT: Random READ/WRITE
Average power supply current
(RAS#, CAS#, address cycling:
OPERATING CURRENT: FAST PAGE MODE
Average power supply current
(RAS# = V
OPERATING CURRENT: EDO PAGE MODE (“X” version only)
Average power supply current
(RAS# = V
REFRESH CURRENT: RAS#-ONLY
Average power supply current
(RAS# cycling, CAS# = V
REFRESH CURRENT: CBR
Average power supply current
(RAS#, CAS#, address cycling:
OPERATING CONDITIONS AND MAXIMUM LIMITS
IL
IL
, CAS#, address cycling:
, CAS#, address cycling:
DD
= +3.3V 0.3V)
IH
DD
)
- 0.2V)
IH
:
t
RC =
t
t
RC =
RC =
t
RC [MIN])
t
t
PC =
PC =
t
t
RC [MIN])
RC [MIN])
t
t
PC [MIN])
PC [MIN])
9
SYMBOL
(X only)
I
I
I
I
I
I
I
NONBUFFERED DRAM DIMMs
CC
CC
CC
CC
CC
CC
CC
Micron Technology, Inc., reserves the right to change products or specifications without notice.
1
2
3
4
5
6
7
16MB
32MB
16MB
32MB
16MB
32MB
16MB
32MB
16MB
32MB
16MB
32MB
16MB
32MB
SIZE
1,980
1,980
1,980
1,980
990
990
990
990
-5*
18
9
9
9
MAX
1,800
1,440
1,800
1,800
1,800
900
720
900
900
900
18
-6
2, 4 MEG x 72
9
9
9
UNITS
1998, Micron Technology, Inc.
mA
mA
mA
mA
mA
mA
mA
NOTES
3, 24
3, 24
3, 24
3, 24
3, 4

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