MT28F400B3 Micron Technology, MT28F400B3 Datasheet - Page 5
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MT28F400B3
Manufacturer Part Number
MT28F400B3
Description
(MT28F004B3 / MT28F400B3) FLASH MEMORY
Manufacturer
Micron Technology
Datasheets
1.MT28F004B3VG-8-TET.pdf
(30 pages)
2.MT28F400B3.pdf
(30 pages)
3.MT28F400B3.pdf
(30 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MT28F400B3SG-9
Manufacturer:
MXIC
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Part Number:
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Manufacturer:
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Quantity:
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Part Number:
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Manufacturer:
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Part Number:
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Manufacturer:
MT
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Part Number:
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Company:
Part Number:
MT28F400B3WG-8 TET
Manufacturer:
SEK
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110
Company:
Part Number:
MT28F400B3WG-8B
Manufacturer:
INF
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Part Number:
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Manufacturer:
MICRON/镁光
Quantity:
20 000
Part Number:
MT28F400B3WG-8BET
Manufacturer:
MICRON/美光
Quantity:
20 000
TRUTH TABLE (MT28F400B3)
NOTE: 1. L = V
4Mb Smart 3 Boot Block Flash Memory
F45_3.p65 – Rev. 3, Pub. 12/01
Standby
RESET
READ (word mode)
READ (byte mode)
Output Disable
ERASE SETUP
ERASE CONFIRM
WRITE SETUP
WRITE (word mode)
WRITE (byte mode)
READ ARRAY
ERASE SETUP
ERASE CONFIRM
ERASE CONFIRM
WRITE SETUP
WRITE (word mode)
WRITE (word mode)
WRITE (byte mode)
WRITE (byte mode)
READ ARRAY
Manufacturer Compatibility
(word mode)
Manufacturer Compatibility
(byte mode)
Device (word mode, top boot)
Device (byte mode, top boot)
Device (word mode, bottom boot)
Device (byte mode, bottom boot)
FUNCTION
READ
WRITE/ERASE (EXCEPT BOOT BLOCK)
WRITE/ERASE (BOOT BLOCK)
DEVICE IDENTIFICATION
10. Value reflects DQ8–DQ15.
2. V
3. Operation must be preceded by ERASE SETUP command.
4. Operation must be preceded by WRITE SETUP command.
5. The READ ARRAY command must be issued before reading the array after writing or erasing.
6. When WP# = V
7. V
8. V
9. A1–A8, A10–A17 = V
PPH
HH
ID
= 12V; may also be read by issuing the IDENTIFY DEVICE command.
= 12V.
10
5
5
= V
IL
(LOW), H = V
PPH 1
3
3
3, 6
4
4
4, 6
4
4
4, 6
(3.3V) or V
IH
, RP# may be at V
IH
IL
.
(HIGH), X = V
PPH 2
10
8, 9
10
(5V).
2, 7
V
V
V
RP#
1
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
L
HH
HH
HH
IH
IL
or V
or V
CE#
2
H
X
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
HH
IH
.
(“Don’t Care”).
OE# WE# WP# BYTE# A0
SMART 3 BOOT BLOCK FLASH MEMORY
H
H
H
X
X
H
H
H
H
H
H
H
H
H
H
H
H
H
L
L
L
L
L
L
L
L
H
H
H
H
H
H
H
H
H
X
X
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
5
X
X
X
X
X
X
X
X
X
X
X
X
X
H
X
X
H
X
H
X
X
X
X
X
X
X
X
H
X
X
X
X
H
X
X
X
X
X
H
H
X
H
H
H
X
L
L
L
L
L
L
L
Micron Technology, Inc., reserves the right to change products or specifications without notice.
X
X
H
H
H
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
H
L
L
V
V
V
V
V
V
A9
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
ID
ID
ID
ID
ID
ID
V
V
V
V
V
V
V
V
V
V
X
X
X
X
X
X
PPH
X
PPH
PPH
X
X
PPH
PPH
X
PPH
PPH
PPH
PPH
X
X
X
X
X
X
X
PP
Data-Out High-Z
Data-Out Data-Out Data-Out
DQ0–DQ7 DQ8–DQ14 DQ15/A-1
10h/40h
10h/40h
Data-In
Data-In
Data-In
Data-In
Data-In
Data-In
High-Z
High-Z
High-Z
D0h
D0h
D0h
20h
20h
89h
89h
70h
70h
71h
71h
FFh
FFh
Data-In
Data-In
Data-In
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
00h
44h
44h
X
X
X
X
X
X
X
X
X
X
X
X
©2001, Micron Technology, Inc.
4Mb
Data-In
Data-In
Data-In
High-Z
High-Z
High-Z
A-1
A-1
A-1
A-1
X
X
X
X
X
X
X
X
X
X
X
X
–
–
–