MT28F800B3 Micron Technology, MT28F800B3 Datasheet

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MT28F800B3

Manufacturer Part Number
MT28F800B3
Description
(MT28F008B3 / MT28F800B3) FLASH MEMORY
Manufacturer
Micron Technology
Datasheet

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DataSheet4U.com
www.DataSheet4U.com
DataSheet
FLASH MEMORY
FEATURES
• Eleven erase blocks:
• Smart 3 technology (B3):
• Compatible with 0.3µm Smart 3 device
• Advanced 0.18µm CMOS floating-gate process
• Address access time: 90ns
• 100,000 ERASE cycles
• Industry-standard pinouts
• Inputs and outputs are fully TTL-compatible
• Automated write and erase algorithm
• Two-cycle WRITE/ERASE sequence
• TSOP, SOP and FBGA packaging options
• Byte- or word-wide READ and WRITE
OPTIONS
• Timing
• Configurations
• Boot Block Starting Word Address
• Operating Temperature Range
• Packages
NOTE:
8Mb Smart 3 Boot Block Flash Memory
Q10_3.p65 – Rev. 3, Pub. 10/01
4
(MT28F800B3):
90ns access
Top (7FFFFh)
Bottom (00000h)
Commercial (0ºC to +70ºC)
Extended (-40ºC to +85ºC)
40-pin TSOP Type I (MT28F008B3)
48-pin TSOP Type I (MT28F800B3)
44-pin SOP (MT28F800B3)
U
1 Meg x 8
16KB/8K-word boot block (protected)
Two 8KB/4K-word parameter blocks
Eight main memory blocks
3.3V ±0.3V V
3.3V ±0.3V V
5V ±10% V
1 Meg x 8/512K x 16
512K x 16/1 Meg x 8
.com
1. This generation of devices does not support 12V V
production programming; however, 5V V
production programming can be used with no loss of
performance.
PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE.
MT28F800B3WG-9 BET
PP
CC
PP
application/production programming
Part Number Example:
application programming
MT28F800B3
MT28F008B3
PP
MARKING
application
None
WG
VG
ET
SG
-9
T
B
PP
DataSheet4U.com
SMART 3 BOOT BLOCK FLASH MEMORY
1
1
MT28F008B3
MT28F800B3
3V Only, Dual Supply (Smart 3)
GENERAL DESCRIPTION
low-voltage, nonvolatile, electrically block-erasable (flash),
programmable memory devices containing 8,388,608 bits
organized as 524,288 words (16 bits) or 1,048,576 bytes (8
bits). Writing and erasing the device is done with a V
voltage of either 3.3V or 5V, while all operations are
performed with a 3.3V V
advances, 5V V
programming. These devices are fabricated with Micron’s
advanced 0.18µm CMOS floating-gate process.
into eleven separately erasable blocks. To ensure that
critical firmware is protected from accidental erasure or
overwrite, the devices feature a hardware-protected
boot block. This block may be used to store code imple-
mented in low-level system recovery. The remaining
blocks vary in density and are written and erased with
no additional security measures.
for the latest data sheet.
40-Pin TSOP Type I 48-Pin TSOP Type I
The MT28F008B3 (x8) and MT28F800B3 (x16/x8) are
The MT28F008B3 and MT28F800B3 are organized
Refer to Micron’s Web site (www.micron.com/flash)
PP
is optimal for application and production
44-Pin SOP
CC
. Due to process technology
©2001, Micron Technology, Inc.
8Mb
PP

Related parts for MT28F800B3

MT28F800B3 Summary of contents

Page 1

... Only, Dual Supply (Smart 3) 40-Pin TSOP Type I 48-Pin TSOP Type I 1 DataSheet4U.com MARKING -9 GENERAL DESCRIPTION The MT28F008B3 (x8) and MT28F800B3 (x16/x8) are MT28F008B3 low-voltage, nonvolatile, electrically block-erasable (flash), MT28F800B3 programmable memory devices containing 8,388,608 bits organized as 524,288 words (16 bits) or 1,048,576 bytes (8 T bits). Writing and erasing the device is done with voltage of either 3 ...

Page 2

... DQ9 18 27 DQ13 DQ2 19 26 DQ5 DQ10 20 25 DQ12 DQ3 21 24 DQ4 DQ11 ORDER NUMBER AND PART MARKING MT28F800B3SG-9 B MT28F800B3SG-9 T MT28F800B3SG-9 BET MT28F800B3SG-9 TET A17 A19 A10 DQ7 DQ6 DQ5 DQ4 DQ3 DQ2 DQ1 DQ0 OE# ...

Page 3

... Command OE# Machine Execution WE# Logic RP Switch/ PP Pump NOTE: 1. Does not apply to MT28F800B3SG. 2. Does not apply to MT28F008B3. FUNCTIONAL BLOCK DIAGRAM 16KB Boot Block 8KB Parameter Block 10 8KB Parameter Block 96KB Main Block 9 128KB Main Block (10) 128KB Main Block 128KB Main Block ...

Page 4

... A0–A18/ Input Address Inputs: Select a unique 16-bit word or 8-bit byte. The (A19) DQ15/( input becomes the lowest order address when BYTE# = LOW (MT28F800B3) to allow for a selection bit byte from the 1,048,576 available. 1, 48, 17 DQ15/ Input/ Data I/O: MSB of data when BYTE# = HIGH. Address Input: LSB ...

Page 5

... TRUTH TABLE (MT28F800B3) FUNCTION Standby RESET READ READ (word mode) READ (byte mode) Output Disable WRITE/ERASE (EXCEPT BOOT BLOCK) ERASE SETUP 3 ERASE CONFIRM WRITE SETUP 4 WRITE (word mode) 4 WRITE (byte mode) 5 READ ARRAY WRITE/ERASE (BOOT BLOCK) ERASE SETUP 3 ERASE CONFIRM ...

Page 6

... Micron Technology, Inc., reserves the right to change products or specifications without notice. 8Mb DQ0–DQ7 High-Z High-Z Data-Out High-Z 20h D0h 10h/40h Data-In FFh 20h D0h D0h 10h/40h Data-In Data-In FFh 89h ...

Page 7

... SOP package.) This provides additional security for the core firmware during in-system firmware updates should an unintentional power fluctuation or system reset occur. The MT28F800B3 and MT28F008B3 are avail- able with the boot block starting at the bottom of the address space (“B” suffix) and the top of the address space (“ ...

Page 8

... See the Command Execution section for more detail. DEEP POWER-DOWN MODE To allow for maximum power conservation, the MT28F800B3 and MT28F008B3 feature a very low cur- rent, deep power-down mode. To enter this mode, the RP# pin is taken to V ±0.2V. In this mode, the current SS draw is a maximum of 8µ ...

Page 9

... WE# must be HIGH, and OE# and CE# must be LOW. However, ID register data is output only on DQ0– DQ7, regardless of the condition of BYTE# on the MT28F800B3 used to decode between the two bytes of the device ID register; all other address inputs are “Don’t Care.” When A0 is LOW, the manufacturer com- patibility ID is output, and when A0 is HIGH, the device ID is output. DQ8– ...

Page 10

... DQ0–DQ7, while DQ8–DQ15 are “Don’t Care” on the MT28F800B3. The command is latched on the rising edge of CE# (CE#-controlled) or WE# (WE#- controlled), whichever occurs first. The condition of BYTE# on the MT28F800B3 has no effect on a com- mand input. MEMORY ARRAY A WRITE to the memory array sets the desired bits to logic 0s but cannot change a given bit to a logic 1 from a logic 0 ...

Page 11

... All of the defined bits are set by the ISM, but only status bits must be cleared 2–0 voltage. It does not monitor V PP voltage. The V PP Micron Technology, Inc., reserves the right to change products or specifications without notice. 8Mb status bit PP PP pin PP ©2001, Micron Technology, Inc. ...

Page 12

... V PP PPH SECOND CYCLE NOTES READ IA ID READ X SRD WRITE BA D0h WRITE X D0h WRITE WA WD WRITE WA WD Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2001, Micron Technology, Inc. 8Mb . PPH until the ...

Page 13

... V PP The only command that may be issued while an After the ISM status bit (SR7) has been set, the V status bit (SR3) is set Micron Technology, Inc., reserves the right to change products or specifications without notice. 8Mb . PPH PP ©2001, Micron Technology, Inc. ...

Page 14

... WRITE/ERASE CYCLE ENDURANCE The MT28F800B3 and MT28F008B3 are designed and fabricated to meet advanced firmware storage require- ments. To ensure this level of reliability, V 3.3V ±0. ±10% during WRITE or ERASE cycles. Due to process technology advances for application and production programming. POWER USAGE ...

Page 15

... SMART 3 BOOT BLOCK FLASH MEMORY 1 DataSheet4U.com NO YES COMPLETE WRITE STATUS-CHECK SEQUENCE Start (WRITE completed SR3 = 0? V Error PP YES NO SR4 = 0? BYTE/WORD WRITE Error YES WRITE Successful Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2001, Micron Technology, Inc. 8Mb 5 ...

Page 16

... ERASE Resumed 16 COMPLETE BLOCK ERASE STATUS-CHECK SEQUENCE SR3 = 0? V Error PP YES YES SR4 Command Sequence Error NO NO SR5 = 0? BLOCK ERASE Error YES ERASE Successful Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2001, Micron Technology, Inc. 8Mb 6 6 ...

Page 17

... STATUS REGISTER READ NO SR7 = 1? YES DataSheet4U.com NO SR6 = 1? YES ERASE Completed WRITE FFh (READ ARRAY) Done NO Reading? YES WRITE D0h (ERASE RESUME) Resume ERASE 17 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2001, Micron Technology, Inc. 8Mb ...

Page 18

... – 0. – 500 ID I – 500 Micron Technology, Inc., reserves the right to change products or specifications without notice. 8Mb UNITS NOTES UNITS NOTES µA µA µA µA ©2001, Micron Technology, Inc. ...

Page 19

... MAX UNITS NOTES 100 µ µ ±15 µ µ Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2001, Micron Technology, Inc. 8Mb NOTES ...

Page 20

... V = +3.3V ±0. -9/-9 ET SYMBOL MIN MAX UNITS ACE AOE RWH 1,000 150 ns Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2001, Micron Technology, Inc. 8Mb 1 NOTES 2 2 ...

Page 21

... TIMING PARAMETERS Commercial Temperature (0ºC Extended Temperature (-40ºC SYMBOL ACE t AOE t AA NOTE: 1. BYTE# = HIGH (MT28F800B3 only). DataSheet4U.com 8Mb Smart 3 Boot Block Flash Memory Q10_3.p65 – Rev. 3, Pub. 10/01 4 DataSheet U .com SMART 3 BOOT BLOCK FLASH MEMORY WORD-WIDE READ CYCLE VALID ADDRESS t RC ...

Page 22

... TIMING PARAMETERS Commercial Temperature (0ºC Extended Temperature (-40ºC SYMBOL ACE t AOE t AA NOTE: 1. BYTE# = LOW (MT28F800B3 only). DataSheet4U.com 8Mb Smart 3 Boot Block Flash Memory Q10_3.p65 – Rev. 3, Pub. 10/01 4 DataSheet U .com SMART 3 BOOT BLOCK FLASH MEMORY BYTE-WIDE READ CYCLE VALID ADDRESS t RC ...

Page 23

... All currents are in RMS unless otherwise noted. 5. Applies to MT28F800B3 only. 6. Applies to MT28F008B3 and MT28F800B3 with BYTE# = LOW. 7. Parameter is specified when device is not accessed. Actual current draw will be I executed while the device is in erase suspend mode. DataSheet4U.com 8Mb Smart 3 Boot Block Flash Memory Q10_3.p65 – ...

Page 24

... TYP MAX TYP MAX UNITS NOTES 0 2 1.5 – 1 – s 1.5 – 1 – s Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2001, Micron Technology, Inc. 8Mb NOTES ...

Page 25

... DON’T CARE -9/-9 ET MIN 100 1,000 100 2 100 100 500 200 0 0 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2001, Micron Technology, Inc. 8Mb CMD in MAX UNITS µ ...

Page 26

... DON’T CARE -9/-9 ET MIN 100 1,000 100 2 100 100 500 200 0 0 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2001, Micron Technology, Inc. 8Mb CMD in MAX UNITS µ ...

Page 27

... DataSheet4U.com .047 (1.20) MAX SEE DETAIL A MIN 27 .010 (0.25) .391 (9.93) .010 (0.25) .004 (0.10) .008 (0.20) .002 (0.05) DETAIL A .0315 (0.80) Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2001, Micron Technology, Inc. 8Mb GAGE PLANE .024 (0.60) .016 (0.40) ...

Page 28

... DataSheet4U.com SEE DETAIL A .047 (1.20) MAX MIN 28 .010 (0.25) .010 (0.25) .004 (0.10) .008 (0.20) .002 (0.05) .0315 (0.80) DETAIL A Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2001, Micron Technology, Inc. 8Mb GAGE PLANE .024 (0.60) .016 (0.40) ...

Page 29

... PLASTIC SOP (600 mil) 1.113 (28.27) 1.107 (28.12) .020 (0.50) .015 (0.38) .499 (12.68) .493 (12.52) .030 (0.76) DataSheet4U.com .106 (2.70) MAX MIN The Micron logo and the M logo are trademarks of Micron Technology, Inc .007 (0.18) .005 (0.13) .643 (16.34) .620 (15.74) SEE DETAIL A .004 (0.10) GAGE PLANE .010 (0.25) .0315 (0.80) (ROTATED 90 CW) ...

Page 30

... Typical main BLOCK WRITE time (byte mode) changed to 1s from 0.5s • Typical main BLOCK WRITE time (word mode) changed to 1s from 0.5s • MT28F800B3 only available in WG and SG packages • MT28F008B3 only available in VG package • Added 80ns access time for commercial and extended temperature ranges DataSheet4U ...

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