MT28F200B5 Micron Technology, MT28F200B5 Datasheet - Page 14

• Manufacturer Part Number: MT28F200B5
• Description: (MT28F002B5 / MT28F200B5) FLASH MEMORY
• Manufacturer: Micron Technology

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DataSheet
WRITE/ERASE CYCLE ENDURANCE
and fabricated to meet advanced firmware storage re-
quirements. To ensure this level of reliability, V
be at 5V 10% during WRITE or ERASE cycles. Due to
process technology advances, 5V V
application and production programming. For back-
ward compatibility with SmartVoltage technology, 12V
V
be connected for up to 100 cumulative hours. Opera-
tion outside these limits may reduce the number of
WRITE and ERASE cycles that can be performed on the
device.
POWER USAGE
power-saving features that may be utilized in the array
read mode to conserve power. Deep power-down mode
is enabled by bringing RP# LOW. Current draw (I
this mode is a maximum of 20 A at 5V V
is HIGH, the device will enter standby mode. In this
mode, maximum I
brought HIGH during a WRITE or ERASE, the ISM will
continue to operate, and the device will consume the
respective active power until the WRITE or ERASE is
completed.
2Mb Smart 5 Boot Block Flash Memory
F50.p65 – Rev. 1/00
4
PP
U
The MT28F002B5 and MT28F200B5 are designed
The MT28F002B5 and MT28F200B5 offer several
is supported for a maximum of 100 cycles and may
.com
CC
current is 130 A at 5V. If CE# is
PP
is optimal for
CC
. When CE#
PP
DataSheet4U.com
CC
must
SMART 5 BOOT BLOCK FLASH MEMORY
) in
14
POWER-UP
tions is minimized since two consecutive cycles are
required to execute either operation. However, to reset
the ISM and to provide additional protection while V
is ramping, one of the following conditions must be
met:
After a power-up or RESET, the status register is reset,
and the device will enter the array read mode.
Address
Data
(5V)
RP#
V
The likelihood of unwanted WRITE or ERASE opera-
• RP# must be held LOW until V
• CE# or WE# may be held HIGH and
NOTE:
CC
Power-Up/Reset Timing Diagram
Micron Technology, Inc., reserves the right to change products or specifications without notice.
functional level; or
RP# must be toggled from V
1. V
goes HIGH.
CC
Note 1
must be within the valid operating range before RP#
Figure 2
t
RWH
t
AA
VALID
CC
VALID
-GND-V
©2000, Micron Technology, Inc.
CC
UNDEFINED
is at valid
CC
2Mb
.
CC
DataShee