MT29F128G08WAAC6 Micron, MT29F128G08WAAC6 Datasheet - Page 54
![no-image](/images/no-image-200.jpg)
MT29F128G08WAAC6
Manufacturer Part Number
MT29F128G08WAAC6
Description
NAND Flash Memory
Manufacturer
Micron
Datasheet
1.MT29F128G08WAAC6.pdf
(115 pages)
- Current page: 54 of 115
- Download datasheet (2Mb)
SET FEATURES EFh
Figure 33:
PDF: 09005aef8278ee3f / Source: 09005aef81f17540
16gb_nand_mlc_l52a__2.fm -Rev. D 5/08 EN
SET FEATURES Operation
WE#
R/B#
I/Ox
CE#
ALE
RE#
CLE
Notes: 1. P1–P4 are the subfeature parameters to be written to the specified feature address (FA).
EFh
The SET FEATURES command is used to set the subfeature parameters at a specified
feature address. These parameters are stored in the device until the device is powered
down. The subfeature parameters are applied to all die on the CE# to which this com-
mand is issued. Figure 33 depicts SET FEATURES behavior and timing.
After all four subfeature parameters, P1–P4, are issued, R/B# goes LOW for
the subfeature parameters are written to the specified feature address. The READ STA-
TUS (70h) command and the RESET (FFh) command are the only valid commands dur-
ing SET FEATURES operation. Bits 5 and 6 of the status register will reflect the state of
R/B#.
Feature address,
Micron Confidential and Proprietary
1 cycle
FA
t ADL
P1
1
54
www.DataSheet.net/
P2
16, 32, 64, 128Gb NAND Flash Memory
Micron Technology, Inc., reserves the right to change products or specifications without notice.
P3
P4
Command Definitions
©2005 Micron Technology, Inc. All rights reserved.
t FEAT
t
FEAT while
Datasheet pdf - http://www.DataSheet4U.co.kr/
Related parts for MT29F128G08WAAC6
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
![MT29F1G16ABBDAH4-IT:D](/images/no-image3.png)
Part Number:
Description:
VFBGA 63/I//MICRON NAND FLASH 1Gb Mass Storage
Manufacturer:
Micron Semiconductor Products
Datasheet:
![MT4264](/images/no-image3.png)
Part Number:
Description:
Manufacturer:
Micron Semiconductor Products
Datasheet:
![MT48LC4M32B2](/images/no-image3.png)
Part Number:
Description:
SYNCHRONOUS DRAM
Manufacturer:
Micron Semiconductor Products
Datasheet:
![MT28F640J3](/images/no-image3.png)
Part Number:
Description:
Q-FLASHTM MEMORY
Manufacturer:
Micron Semiconductor Products
Datasheet:
![MT4C4M4A1DJ-6](/images/no-image3.png)
Part Number:
Description:
Manufacturer:
Micron Semiconductor Products
Datasheet:
![MT4C4M4A1TG-6](/images/no-image3.png)
Part Number:
Description:
Manufacturer:
Micron Semiconductor Products
Datasheet:
![MT4C4M4B1DJ-5](/images/no-image3.png)
Part Number:
Description:
Manufacturer:
Micron Semiconductor Products
Datasheet:
![MT4C4M4B1DJ-6](/images/no-image3.png)
Part Number:
Description:
Manufacturer:
Micron Semiconductor Products
Datasheet:
![MT4LC4M4A1DJ-6](/images/no-image3.png)
Part Number:
Description:
4Meg x 4, 3,3V FPM DRAM
Manufacturer:
Micron Semiconductor Products
Datasheet:
![MT4LC4M4A1TG-6](/images/no-image3.png)
Part Number:
Description:
4Meg x 4, 3,3V FPM DRAM
Manufacturer:
Micron Semiconductor Products
Datasheet:
![MT4LC4M4B1DJ-5](/images/no-image3.png)
Part Number:
Description:
Manufacturer:
Micron Semiconductor Products
Datasheet:
![MT4LC4M4B1TG-5](/images/no-image3.png)
Part Number:
Description:
Manufacturer:
Micron Semiconductor Products
Datasheet:
![MT4LC4M4E8DJ-5](/images/no-image3.png)
Part Number:
Description:
4Meg x 4 banks, EDO DRAM, 3.3V, standard refresh, 50ns
Manufacturer:
Micron Semiconductor Products
Datasheet:
![MT4LC4M4E8TG-5](/images/no-image3.png)
Part Number:
Description:
4Meg x 4 banks, EDO DRAM, 3.3V, standard refresh, 50ns
Manufacturer:
Micron Semiconductor Products
Datasheet:
![MT4LC4M4E8TG-6](/images/no-image3.png)
Part Number:
Description:
4Meg x 4 banks, EDO DRAM, 3.3V, standard refresh, 60ns
Manufacturer:
Micron Semiconductor Products
Datasheet: