MT29F8G08FACWP Micron Technology, MT29F8G08FACWP Datasheet - Page 20

• Manufacturer Part Number: MT29F8G08FACWP
• Description: NAND Flash Memory
• Manufacturer: Micron Technology

Figure 15:
Table 8:
PDF: 09005aef814b01a2 / Source: 09005aef814b01c7
2_4_8gb_nand_m49a__2.fm - Rev. A 3/06 EN
www.DataSheet4U.net
CLE
H
H
X
X
X
X
L
L
L
L
L
ALE
Mode Selection
I
H
H
X
X
X
X
L
L
L
L
L
OL
vs. Rp
Notes: 1. WP# should be biased to CMOS HIGH or LOW for standby.
CE#
X
X
X
H
L
L
L
L
L
L
L
T (µs)
2. Do not transition PRE during device operations. PRE is only supported on 3V devices and
3. H = Logic level HIGH; L = Logic level LOW; X = V
can be left unconnected if not used. PRE is not supported on extended-temperature
devices.
WE#
3.50
3.00
2.50
2.00
1.50
1.00
0.50
0.00
H
H
X
X
X
X
0
RE#
H
H
H
H
H
H
X
X
X
X
2,000
0V/Vcc
WP#
4,000
X
X
H
H
H
X
X
H
H
L
1
20
2Gb, 4GB, 8Gb: x8, x16 NAND Flash Memory
Rp (Ω)
6,000
0V/Vcc
PRE
X
X
X
X
X
X
X
X
X
X
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2
8,000
Mode
Read mode
Write mode
Data input
Sequential read and data output
During read (busy)
During program (busy)
During erase (busy)
Write protect
Standby
IH
or V
I
I
10,000
OL
OL
at 3.60V (mA)
at 1.95V (mA)
IL
12,000
©2005 Micron Technology, Inc. All rights reserved.
Command input
Address input
Command input
Address input
Bus Operation