MT29F8G08FACWP Micron Technology, MT29F8G08FACWP Datasheet - Page 29

• Manufacturer Part Number: MT29F8G08FACWP
• Description: NAND Flash Memory
• Manufacturer: Micron Technology

PROGRAM Operations
PROGRAM PAGE 80h-10h
SERIAL DATA INPUT 80h
RANDOM DATA INPUT 85h
Figure 22:
Figure 23:
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2_4_8gb_nand_m49a__2.fm - Rev. A 3/06 EN
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R/B#
I/Ox
R/B#
I/Ox
80h
80h
PROGRAM and READ STATUS Operation
RANDOM DATA INPUT
Address (5 Cycles)
Address (5 Cycles)
Micron NAND Flash devices are inherently page-programmed devices. Pages must be
programmed consecutively within a block, from the least significant page address to the
most significant page address (i.e., 0, 1, 2, …, 63). Random page address programming is
prohibited.
Micron NAND flash devices also support partial-page programming operations. This
means that any single bit can only be programmed one time before an erase is required;
however, the page can be partitioned such that a maximum of eight programming oper-
ations are allowed before an erase is required.
PROGRAM PAGE operations require loading the SERIAL DATA INPUT (80h) command
into the command register, followed by five ADDRESS cycles, then the data. Serial data
is loaded on consecutive WE# cycles starting at the given address. The PROGRAM (10h)
command is written after the data input is complete. The control logic automatically
executes the proper algorithm and controls all the necessary timing to program and ver-
ify the operation. Write verification only detects “1s” that are not successfully written
to “0s.”
R/B# goes LOW for the duration of array programming time,
(70h) command and the RESET (FFh) command are the only commands valid during the
programming operation. Bit 6 of the status register will reflect the state of R/B#. When
the device reaches ready, read bit 0 of the status register to determine if the program
operation passed or failed (see Figure 22). The command register stays in read status
register mode until another valid command is written to it.
After the initial data set is input, additional data can be written to a new column address
with the RANDOM DATA INPUT (85h) command. The RANDOM DATA INPUT com-
mand can be used any number of times in the same page prior to issuing the PAGE
WRITE (10h) command. See Figure 23 for the proper command sequence.
D
IN
D
85h
IN
Address (2 Cycles)
10h
t PROG
29
2Gb, 4GB, 8Gb: x8, x16 NAND Flash Memory
D
IN
Micron Technology, Inc., reserves the right to change products or specifications without notice.
10h
70h
t PROG
I/O 0 = 0 PROGRAM successful
I/O 0 = 1 PROGRAM error
Command Definitions
t
Status
PROG. The READ STATUS
70h
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Status