MT58L64V36P Micron Semiconductor, MT58L64V36P Datasheet - Page 10

• Manufacturer Part Number: MT58L64V36P
• Description: (MT58LxxxxP) 2Mb SRAM
• Manufacturer: Micron Semiconductor

NOT RECOMENDED FOR NEW DESIGNS
2.5V I/O DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS
(0°C ≤ T
NOTE: 1. All voltages referenced to V
2Mb: 128K x 18, 64K x 32/36 Pipelined, SCD SyncBurst SRAM
MT58L128L18P_C.p65 – Rev. C, Pub. 11/02
DESCRIPTION
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
Supply Voltage
Isolated Output Buffer Supply
2. Overshoot:
3. MODE pin has an internal pull-up, and input leakage = ±10µA.
4. The load used for V
5. V
A
Undershoot:
Power-up:
than the shown DC values. AC I/O curves are available upon request.
≤ +70°C; V
DD
Q should never exceed V
DD
V
V
V
= +3.3V +0.3V/-0.165V; V
IH
IL
IH
≥ -0.7V for t ≤
≤ +4.6V for t ≤
≤ +3.6V and V
OH
, V
OL
testing is shown in Figure 2 for 3.3V I/O and Figure 4 for 2.5V I/O. AC load current is higher
SS
DD
(GND).
. V
0V ≤ V
Output(s) disabled,
DD
t
KC/2 for I ≤ 20mA
DD
t
KC/2 for I ≤ 20mA
Data bus (DQx)
≤ 3.135V for t ≤ 200ms
CONDITIONS
0V ≤ V
and V
I
I
OH
OH
I
I
OL
OL
IN
Inputs
= -2.0mA
= -1.0mA
= 2.0mA
= 1.0mA
≤ V
DD
IN
Q can be connected together for 3.3V I/O.
DD
DD
≤ V
Q (DQx)
Q = +2.5V +0.4V/-0.125V unless otherwise noted)
DD
10
PIPELINED, SCD SYNCBURST SRAM
SYMBOL
V
V
V
V
V
V
V
2Mb: 128K x 18, 64K x 32/36
V
IL
V
DD
IL
IH
OH
OH
DD
OL
OL
IH
IL
O
Q
I
Q
Micron Technology, Inc., reserves the right to change products or specifications without notice.
3.135
2.375
MIN
-0.3
-1.0
-1.0
1.7
1.7
1.7
2.0
–
–
V
V
DD
DD
MAX
Q + 0.3
0.7
1.0
1.0
0.7
0.4
3.6
2.9
–
–
+ 0.3
UNITS
µA
µA
V
V
V
V
V
V
V
V
V
©2002, Micron Technology, Inc.
NOTES
1, 2
1, 2
1, 2
1, 4
1, 4
1, 4
1, 4
3
1
1