MTC3504BJ4 Cystech Electonics, MTC3504BJ4 Datasheet - Page 7

• Manufacturer Part Number: MTC3504BJ4
• Description: N & P-Channel Enhancement Mode Power MOSFET
• Manufacturer: Cystech Electonics

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Characteristic Curves(Cont.)
MTC3504BJ4
10
0.01
0
6
8
4
2
0.1
80
50
10
0.00001
1
0
1
0
0
I = - 9A
R
Duty C ycle = 0.5
0.1
0.05
0.02
0.01
0.2
D
DS (ON)
R = 6°C /W
S ingle Pulse
V = -10V
θ
T = 25°C
JC
C
GS
Limit
1
S ingle Pulse
Gate C harge C haracteristics
Q - G ate C harge(nC )
Maximum S afe Operating Area
g
-V - Drain-S ource Voltage(V)
4
DS
0.0001
E ffective Transient Thermal Impedance
V = - 15V
DS
t , Pulse Width(ms)
1
CYStech Electronics Corp.
8
10
- 20V
0.001
DC
10s
1s
100ms
10ms
12
1ms
40 50
0.01
100
μ
s
16
0.1
1.Duty C ycle,D =
2.R = 6°C /W
3.T - T = P * R (t)
4.R (t)=r(t) * R
Notes
P
DM
θ
θ
J
JC
JC
C
t1
:
t2
1200
1500
900
600
300
θ
θ
JC
JC
0
t1
t2
10
50
40
30
20
0
0
0.001
1
- V , Drain-S ource Voltage(V)
DS
S ingle Pulse Maximum Power Dissipation
C apacitance C haracteristics
0.01
10
t ,Time (sec)
C oss
C iss
C rss
1
0.1
20
1
CYStek Product Specification
R = 6°C /W
S ingle Pulse
T = 25°C
Spec. No. : C449J4
Issued Date : 2009.03.11
Revised Date :
Page No. : 7/11
θ
C
J C
30
f = 1 MHz
V = 0 V
10
GS
100
40
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