2SD1222 Toshiba Semiconductor, 2SD1222 Datasheet - Page 3

• Manufacturer Part Number: 2SD1222
• Description: NPN EPITAXIAL TYPE (SWITCHING/ HAMMER DRIVE/ PULSE MOTOR DRIVE/ POWER AMPLIFIER APPLICATIONS)
• Manufacturer: Toshiba Semiconductor

10000
5000
3000
1000
500
300
2
1
4
3
2
1
0
4
3
0
0.1
0
0
Common emitter
Tc = 25°C
Common emitter
Tc = −55°C
Tc = 100°C
Collector-emitter voltage V
Collector-emitter voltage V
1
1
0.3
Collector current I
25
−55
2
2
I
I
h
C
C
FE
– V
– V
1
– I
CE
CE
C
3
3
C
Common emitter
V CE = 2 V
CE
CE
(A)
I B = 175 μA
3
I B = 300 μA
4
4
(V)
(V)
300
275
250
225
200
0
600
500
400
0
10
5
5
3
www.DataSheet.net/
0.5
3
2
1
3
2
1
5
3
4
0
4
0
1
0.2
0
0
Common emitter
Tc = 100°C
Common emitter
V CE = 2 V
Tc = 100°C
Collector-emitter voltage V
0.8
Tc = −55°C
100
Base-emitter voltage V
1
25
Collector current I
0.5
25
V
1.6
CE (sat)
2
I
I
C
C
– V
– V
−55
1
CE
BE
– I
2.4
Common emitter
I C /I B = 500
3
C
C
BE
CE
(A)
I B = 100 μA
(V)
3.2
4
(V)
3
200
175
150
125
2010-02-05
0
2SD1222
4.0
5
5
Datasheet pdf - http://www.DataSheet4U.co.kr/