2SD1260 Panasonic Semiconductor, 2SD1260 Datasheet
2SD1260
Manufacturer Part Number
2SD1260
Description
Silicon PNP epitaxial planar type Darlington(For power amplification and switching)
Manufacturer
Panasonic Semiconductor
Datasheet
1.2SD1260.pdf
(2 pages)
Power Transistors
2SD1260, 2SD1260A
Silicon NPN triple diffusion planar type Darlington
For power amplification
Complementary to 2SB937 and 2SB937A
*
h
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Collector cutoff
current
Collector cutoff
current
Emitter cutoff current
Collector to emitter
voltage
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
FE2
Features
High foward current transfer ratio h
High-speed switching
N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
Absolute Maximum Ratings
Electrical Characteristics
Rank
h
FE2
Rank classification
Parameter
Parameter
1000 to 2500 2000 to 5000 4000 to 10000
2SD1260
2SD1260A
2SD1260
2SD1260A
T
Ta=25 C
C
R
=25 C
2SD1260
2SD1260A
2SD1260
2SD1260A
2SD1260
2SD1260A
Symbol
V
V
V
I
I
P
T
T
CP
C
Q
C
j
stg
CBO
CEO
EBO
I
I
I
V
h
h
V
V
f
t
t
t
on
stg
f
CBO
CEO
EBO
T
FE1
FE2
(T
Symbol
CEO
BE
CE(sat)
C
*
(T
FE
=25˚C)
–55 to +150
C
=25˚C)
Ratings
P
150
1.3
60
80
60
80
35
5
4
2
V
V
V
V
V
I
V
V
V
I
V
I
V
C
C
C
CE
CE
CE
CE
EB
CE
CE
CE
CE
CC
= 30mA, I
= 2A, I
= 2A, I
= 60V, I
= 80V, I
= 30V, I
= 40V, I
= 5V, I
= 4V, I
= 4V, I
= 4V, I
= 10V, I
= 50V
B
B1
C
C
C
C
Internal Connection
= 8mA
Unit
Conditions
= 8mA, I
E
B
B
B
C
˚C
˚C
W
B
V
V
V
A
A
= 0
= 1A
= 2A
= 2A
= 0
= 0
= 0
= 0
= 0.5A, f = 1MHz
= 0
B2
= –8mA,
B
1000
1000
min
1
1
60
80
5.08 0.5
5.08 0.5
8.5 0.2
6.0 0.5
8.5 0.2
6.0 0.3
C
E
2
2
3
3
2.54 0.3
2.54 0.3
0.8 0.1
0.8 0.1
1.5max.
typ
0.5
20
4
1
1.1 max.
R0.5
R0.5
1:Base
2:Collector
3:Emitter
N Type Package (DS)
10000
max
3.4 0.3
1:Base
2:Collector
3:Emitter
N Type Package
2.8
2.5
1
1
2
2
2
3.4 0.3
1.0 0.1
0 to 0.4
0.5max.
1.0 0.1
1.1max.
Unit: mm
Unit: mm
MHz
Unit
mA
mA
mA
V
V
V
s
s
s
1
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2SD1260 Summary of contents
Page 1
... Power Transistors 2SD1260, 2SD1260A Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB937 and 2SB937A Features High foward current transfer ratio h High-speed switching N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. ...
Page 2
... A ) Collector current th( –1 10 –2 10 –4 –3 –2 – Time 2SD1260, 2SD1260A I — = 25˚C T =100˚C –25˚ 0.8 1.6 2.4 Base to emitter voltage — 10000 ...