2SD1260 Panasonic Semiconductor, 2SD1260 Datasheet - Page 2

• Manufacturer Part Number: 2SD1260
• Description: Silicon PNP epitaxial planar type Darlington(For power amplification and switching)
• Manufacturer: Panasonic Semiconductor

Power Transistors
2
0.03
0.01
0.03
0.01
100
100
0.3
0.1
0.3
0.1
40
35
30
25
20
15
10
30
10
30
10
Collector to emitter voltage V
5
0
3
1
0.01
3
1
Area of safe operation (ASO)
0
1
100˚C
Ambient temperature Ta ( ˚C )
I
I
T
CP
C
C
20
=–25˚C
0.03
Collector current I
3
40
V
300ms
(1)
(2)
(3)
0.1
10
CE(sat)
P
60
C
(1) T
(2) With a 50
(3) Without heat sink
— Ta
0.3
Al heat sink
(P
30
80
C
Non repetitive pulse
T
=Ta
C
— I
C
=1.3W)
t=10ms
=25˚C
100
1ms
100
1
C
C
120
I
C
50
/I
300
25˚C
( A )
B
3
=250
140
CE
2mm
1000
160
10
( V )
10
10
10
10
10
10
10
10
10
10
Collector to emitter voltage V
–1
–2
5
4
3
2
1
0
0.01
1
10
5
4
3
2
3
2
0
–4
T
C
–25˚C
=100˚C
25˚C
0.03
Collector current I
1
10
–3
I
0.1
h
2
C
FE
— V
— I
0.3
3
10
I
B
=2.0mA
CE
–2
C
4
1
1.8mA
1.6mA
1.4mA
1.2mA
1.0mA
C
0.8mA
0.6mA
0.4mA
0.2mA
T
10
V
( A )
C
3
5
CE
=25˚C
–1
CE
=4V
Time t ( s )
R
10
( V )
6
th(t)
1
— t
10000
3000
1000
(1) Without heat sink
(2) With a 50
300
100
10
30
10
10
2SD1260, 2SD1260A
8
6
4
2
0
3
1
0.1
Collector to base voltage V
0
Base to emitter voltage V
0.3
10
0.8
50
C
2
I
T
C
ob
1
C
=100˚C
2mm Al heat sink
— V
— V
1.6
10
3
3
25˚C
BE
CB
10
–25˚C
(1)
(2)
2.4
I
f=1MHz
T
E
10
C
=0
V
=25˚C
BE
30
4
CE
CB
=4V
( V )
( V )
100
3.2