2SD1470 Hitachi Semiconductor, 2SD1470 Datasheet
2SD1470
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2SD1470 Summary of contents
Page 1
... Silicon NPN Epitaxial, Darlington Application Low frequency power amplifier Outline UPAK 2SD1470 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange ...
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... Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Notes ms, Duty cycle 2. Value on the alumina ceramic board (12 0.7 mm) Electrical Characteristics (Ta = 25°C) ...
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... C(peak) 1.0 0 1Shot Pulse 0.1 0.03 0.01 3 150 Collector to Emitter Voltage V DC Current Transfer Ratio vs. 300 100 (V) 2SD1470 Area of Safe Operation 10 30 100 1,000 (V) CE Collector Current 25 – Pulse 30 100 300 1,000 Collector Current I (mA ...
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... Saturation Voltage vs. Collector Curret BE(sat) 1.0 V CE(sat) 0 1,000 100 300 Collector Current I (mA) C Transient Thermal Resistance the alumina ceramic board(12.5 100 m 1 Time t (s) 1,000 30 0.7 mm) 10 100 1,000 ...
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Max 1 0.53 Max 0.48 Max 1.5 1.5 3.0 1.5 0.1 0.44 Max 0.44 Max Hitachi Code JEDEC EIAJ Weight (reference value) Unit: mm (1.5) UPAK — Conforms 0.050 g ...
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... This product is not designed to be radiation resistant one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. ...