2SD1470 Hitachi Semiconductor, 2SD1470 Datasheet - Page 2

• Manufacturer Part Number: 2SD1470
• Description: Silicon NPN Epitaxial/ Darlington
• Manufacturer: Hitachi Semiconductor

2SD1470
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Notes: 1. PW
Electrical Characteristics (Ta = 25°C)
Item
Collector to base breakdown
voltage
Collector to emitter breakdown
voltage
Emitter to base breakdown
voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector to emitter saturation
voltage
Base to emitter saturation
voltage
Notes: 1. Pulse test
2
2. Value on the alumina ceramic board (12.5 x 30 x 0.7 mm)
2. Marking is “AT”.
10 ms, Duty cycle
Symbol
V
V
V
I
I
h
V
V
CBO
EBO
FE
(BR)CBO
(BR)CEO
(BR)EBO
CE(sat)
BE(sat)
20%
Min
60
60
7
—
—
2000
—
—
Symbol
V
V
V
I
i
P
Tj
Tstg
Typ
—
—
—
—
—
—
—
—
C(peak)
C
CBO
CEO
EBO
C
*
2
*
1
Max
—
—
—
10
10
100000
1.5
2.0
Unit
V
V
V
V
V
A
A
Ratings
60
60
7
1
2
1
150
–55 to +150
Test conditions
I
I
I
V
V
V
I
I
C
C
E
C
C
CB
EB
CE
= 500 mA, I
= 500 mA, I
= 10 A, I
= 10 A, I
= 1 mA, R
= 7 V, I
= 60 V, I
= 3 V, I
C
C
C
E
E
Unit
V
V
V
A
A
W
= 0
= 0.5 A*
BE
C
C
= 0
= 0
= 0
B
B
=
= 0.5 mA*
= 0.5 mA*
1
1
1