2SB030070MLJY Silan Microelectronics, 2SB030070MLJY Datasheet

2SB030070MLJY

Manufacturer Part Number

2SB030070MLJY

Description

2SB030070MLJY SCHOTTKY BARRIER DIODE CHIPS

Manufacturer

Silan Microelectronics

Datasheet

1.2SB030070MLJY.pdf (1 pages)

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2SB030070MLJY SCHOTTKY BARRIER DIODE CHIPS

DESCRIPTION

ABSOLUTE MAXIMUM RATINGS

ELECTRICAL CHARACTERISTICS (Tamb=25 C)

Reverse Voltage

Forward Voltage

Reverse Current

HANGZHOU SILAN MICROELECTRONICS CO.,LTD

Http: www.silan.com.cn

Maximum Repetitive Peak Reverse Voltage

Average Forward Rectified Current

Peak Forward Surge Current@8.3ms

Maximum Operation Junction Temperature

Storage Temperature Range

2SB030070MLJY is a schottky barrier diode chips

fabricated in silicon epitaxial planar technology;

Low power losses, high efficiency;

Guard ring construction for transient protection;

High ESD capability;

High surge capability;

Packaged products are widely used in switching

power suppliers, polarity protection circuits and

other electronic circuits;

Chip Size:300 m X 300 m;

Chip Thickness: 155±20 m

Parameters

Symbol

FSM

FAV

RRM

STG

Test Conditions

ORDERING SPECIFICATIONS

2SB030070MLJY

=1.0mA

=10mA

=15mA

Product Name

=50V

=70V

Chip Topography and Dimensions

La: Chip Size:300 m;

Lb: Pad Size: 150 m;

Ratings

-40~125

125

For Au and AlSi wire bonding

package

Min.

2SB030070MLJY

REV:1.0

Specification

Max.

0.40

0.71

0.95

0.08

Page 1 of 1

2007.10.15

Unit

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