2SB1181 Rohm, 2SB1181 Datasheet

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2SB1181

Manufacturer Part Number
2SB1181
Description
Power Transistor
Manufacturer
Rohm
Datasheet

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Transistors
Power Transistor (−80V, −1A)
2SB1260 / 2SB1181 / 2SB1241
!Features
1) High breakdown voltage and high
2) Good h
3) Low V
4) Complements the 2SD1898 /
! ! ! ! Structure
Epitaxial planar type
PNP silicon transistor
! ! ! ! Absolute maximum ratings (Ta=25°C)
*1 Single pulse, Pw=100ms
*2 When mounted on a 40×40×0.7 mm ceramic board.
*3 Printed circuit board, 1.7mm thick, collector copper plating 100mm
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Junction temperature
Storage temperature
Collector power
dissipation
current.
BV
2SD1863 / 2SD1733.
CEO
= −80V, I
CE(sat)
FE
linearity.
Parameter
.
2SB1260
2SB1241, 2SB1181
2SB1181
C
=−1A
Symbol
V
V
V
! ! ! ! External dimensions (Units : mm)
Tstg
* Denotes h
I
P
CBO
CEO
EBO
I
Tj
0.65Max.
CP
C
C
ROHM : MPT3
EIAJ : SC-62
2SB1260
2SB1241
(1)
ROHM : ATV
0.4±0.1
1.5±0.1
2.54 2.54
2
6.8±0.2
(2)
FE
or larger.
(1)
(3)
1.6±0.1
4.5
(2)
0.5±0.1
3.0±0.2
-55~+150
Limits
0.5±0.1
+0.2
−0.1
-80
-80
150
Abbreviated
symbol: BH
0.5
-5
-1
-2
10
2
1
(3)
0.4±0.1
1.5±0.1
1.05
2SB1260 / 2SB1181 / 2SB1241
2.5±0.2
(1) Emitter
(2) Collector
(3) Base
1.5
+0.2
−0.1
W(Tc=25˚C)
0.45±0.1
A(Pulse)
(1) Base
(2) Collector
(3) Emitter
A(DC)
0.4
Unit
˚C
˚C
W
V
V
V
+0.1
−0.05
2SB1181
*1
*2
*3
0.75
2.3
ROHM : CPT3
EIAJ : SC-63
±
(1)
0.9
0.2
6.5
5.1
+0.2
(2)
±
0.1
0.2
2.3
(3)
±
0.2
0.65
C0.5
±
0.1
(1) Base
(2) Collector
(3) Emitter
0.5
1.0
2.3
0.55
+0.2
±
±
0.1
0.1
0.2
±
0.1

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2SB1181 Summary of contents

Page 1

... Collector current 2SB1260 Collector power dissipation 2SB1241, 2SB1181 2SB1181 Junction temperature Storage temperature *1 Single pulse, Pw=100ms *2 When mounted on a 40×40×0.7 mm ceramic board. *3 Printed circuit board, 1.7mm thick, collector copper plating 100mm 2SB1260 / 2SB1181 / 2SB1241 ! ! ! ! External dimensions (Units : mm) 2SB1260 +0.2 4.5 −0.1 +0.2 1.5 −0.1 1.6±0.1 (1) ...

Page 2

... FE Item 82~180 120~270 Electrical characteristic curves -1000 Ta=25˚ -100 -10 -1 -0.1 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 (V) BASE TO EMITTER VOLTAGE : V BE Fig.1 Grounded emitter propagation characteristics 2SB1260 / 2SB1181 / 2SB1241 Symbol Min. Typ. Max CBO BV - CEO EBO CBO EBO ...

Page 3

... Single -2 nonrepetitive pulse -1 -0.5 -0.2 -0.1 -0.05 -0.02 -0.01 -0.1 -0.2 -0 -10 -20 -50 -100 COLLECTOR TO EMITTER VOLTAGE : V CE Fig.10 Safe operating area (2SB1181) 2SB1260 / 2SB1181 / 2SB1241 1000 Ta=25˚ 500 CE 200 100 100 200 500 1000 (mA) EMITTER CURRENT : I E Fig.5 Gain bandwidth product vs. ...

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