2N3993 ETC, 2N3993 Datasheet
2N3993
Manufacturer Part Number
2N3993
Description
P-Channel Silicon Junction Field-Effect Transistor
Manufacturer
ETC
Datasheet
1.2N3993.pdf
(1 pages)
01/99
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TOÐ72 Package
Dimensions in Inches (mm)
www.interfet.com
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Gate Source Cutoff Voltage
Drain Saturation Current (Pulsed)
Drain Reverse Current
Drain Cutoff Current
Dynamic Electrical Characteristics
Drain Source ON Resistance
Common Source
Forward Transmittance
Common Source Input Capacitance
Common Source
Reverse Transfer Capacitance
Pin Configuration
1 Source, 2 Gate, 3 Drain, 4 Case
V
V
I
I
I
r
| Y
C
C
DSS
DGO
D(OFF)
ds(on)
(BR)GSS
GS(OFF)
iss
rss
fs
|
P-Channel Silicon Junction Field-Effect Transistor
– 10
Min
25
4
6
2N3993
Absolute maximum ratings at T
Reverse Gate Source & Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
– 1.2
– 1.2
– 1.2
Max
150
9.5
– 1
4.5
12
16
– 10
Min
2N3993A
25
4
7
– 1.2
– 1.2
– 1.2
Max Unit
150
9.5
– 1
12
12
3
mA
mS
nA
µA
nA
µA
pF
pF
Ω
V
V
I
V
V
V
V
V
V
V
V
V
V
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
G
DS
DS
DG
DG
DS
DS
GS
DS
DS
DS
= 1 µA, V
= – 10V, I
= – 10V, V
= – 10V, V
= – 10V, V
= ØV, I
= – 10V, V
= – 10V, V
= Ø, V
= – 15V, I
= – 15V, I
A
= 25¡C
GS
Process PJ99
D
DS
= Ø A
= 10V
D
S
S
= ØV
GS
GS
GS
GS
GS
2N3993, 2N3993A
= – 1 µA
= ØA
= ØA
Test Conditions
= ØV
= 10 V
= 10 V
= ØV
= ØV
FAX
(972) 276-3375
2.4 mW/°C
– 10 mA
300 mW
25 V
T
T
f = 1 kHz
f = 1 kHz
f = 1 MHz
f = 1 MHz
A
A
= 150°C
= 150°C
B-7