ISL6613B Intersil Corporation, ISL6613B Datasheet

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ISL6613B

Manufacturer Part Number
ISL6613B
Description
(ISL6612B / ISL6613B) Advanced Synchronous Rectified Buck MOSFET Drivers
Manufacturer
Intersil Corporation
Datasheet
Advanced Synchronous Rectified Buck
MOSFET Drivers with Pre-POR OVP
The ISL6612B and ISL6613B are high frequency MOSFET
drivers specifically designed to drive upper and lower power
N-Channel MOSFETs in a synchronous rectified buck
converter topology. These drivers combined with HIP63xx or
ISL65xx Multi-Phase Buck PWM controllers and N-Channel
MOSFETs form complete core-voltage regulator solutions for
advanced microprocessors.
The ISL6612B drives the upper gate to above rising VCC
POR (7V), while the lower gate can be independently driven
over a range from 5V to 12V. The ISL6613B drives both
upper and lower gates over a range of 5V to 12V. This drive-
voltage provides the flexibility necessary to optimize
applications involving trade-offs between gate charge and
conduction losses. These drivers are optimized for POL
DC/DC Converters for IBA Systems.
An advanced adaptive zero shoot-through protection is
integrated to prevent both the upper and lower MOSFETs
from conducting simultaneously and to minimize the dead
time. These products add an overvoltage protection feature
operational before VCC exceeds its turn-on threshold, at
which the PHASE node is connected to the gate of the low
side MOSFET (LGATE). The output voltage of the converter
is then limited by the threshold of the low side MOSFET,
which provides some protection to the microprocessor if the
upper MOSFET(s) is shorted during initial start-up.
These drivers also feature a three-state PWM input which,
working together with Intersil’s multi-phase PWM controllers,
prevents a negative transient on the output voltage when the
output is shut down. This feature eliminates the Schottky
diode that is used in some systems for protecting the load
from reversed output voltage events.
®
1
Data Sheet
1-888-INTERSIL or 1-888-468-3774
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
Features
• Pin-to-pin Compatible with HIP6601 SOIC family
• Dual MOSFET Drives for Synchronous Rectified Bridge
• Low VCC Rising Threshold (7V) for IBA Applications.
• Advanced Adaptive Zero Shoot-Through Protection
• Adjustable Gate Voltage (5V to 12V) for Optimal Efficiency
• 36V Internal Bootstrap Schottky Diode
• Bootstrap Capacitor Overcharging Prevention
• Supports High Switching Frequency (up to 2MHz)
• Three-State PWM Input for Output Stage Shutdown
• Three-State PWM Input Hysteresis for Applications With
• Pre-POR Overvoltage Protection
• VCC Undervoltage Protection
• Expandable Bottom Copper Pad for Enhanced Heat
• Dual Flat No-Lead (DFN) Package
• Pb-Free Plus Anneal Available (RoHS Compliant)
Applications
• Optimized for POL DC/DC Converters for IBA Systems
• Core Regulators for Intel
• High Current DC/DC Converters
• High Frequency and High Efficiency VRM and VRD
Related Literature
• Technical Brief TB363 “Guidelines for Handling and
• Technical Brief TB417 for Power Train Design, Layout
- Body Diode Detection
- Auto-zero of r
- 3A Sinking Current Capability
- Fast Rise/Fall Times and Low Propagation Delays
Power Sequencing Requirement
Sinking
- Near Chip-Scale Package Footprint; Improves PCB
Processing Moisture Sensitive Surface Mount Devices
(SMDs)”
Guidelines, and Feedback Compensation Design
Efficiency and Thinner in Profile
All other trademarks mentioned are the property of their respective owners.
July 27, 2006
|
Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright Intersil Americas Inc. 2005-2006. All Rights Reserved
DS(ON)
ISL6612B, ISL6613B
Conduction Offset Effect
®
and AMD
®
Microprocessors
FN9205.3

Related parts for ISL6613B

ISL6613B Summary of contents

Page 1

... The ISL6612B drives the upper gate to above rising VCC POR (7V), while the lower gate can be independently driven over a range from 5V to 12V. The ISL6613B drives both upper and lower gates over a range 12V. This drive- voltage provides the flexibility necessary to optimize applications involving trade-offs between gate charge and conduction losses ...

Page 2

... ISL6612BIRZ (Note) 2BIZ ISL6612BIRZ-T (Note) 2BIZ ISL6613BCB 6613BCB ISL6613BCB-T 6613BCB ISL6613BCBZ (Note) 6613BCBZ ISL6613BCBZ-T (Note) 6613BCBZ ISL6613BCR 13BC ISL6613BCR-T 13BC ISL6613BCRZ (Note) 13BZ ISL6613BCRZ-T (Note) 13BZ ISL6613BECB 6613BECB ISL6613BECB-T 6613BECB ISL6613BECBZ (Note) 6613BECBZ ISL6613BECBZ-T (Note) 6613BECBZ ISL6613BEIB 6613BEIB ISL6613BEIB-T 6613BEIB ISL6613BEIBZ (Note) ...

Page 3

... FOR DFN AND EPSOIC-DEVICES, THE PAD ON THE BOTTOM SIDE OF PAD THE PACKAGE MUST BE SOLDERED TO THE CIRCUIT’S GROUND. PKG. PACKAGE DWG SOIC M8. SOIC (Pb-free) M8. 3x3 DFN L10.3x3 10 Ld 3x3 DFN (Pb-free) L10.3x3 ISL6612BCR, ISL6613BCR (10L 3x3 DFN) TOP VIEW 1 10 UGATE PHASE BOOT 2 9 PVCC GND 3 8 N/C ...

Page 4

... MAIN MAIN CONTROL CONTROL ISL65xx ISL65xx VID VID ISEN1 ISEN1 ISEN2 ISEN2 FS FS ISEN3 ISEN3 GND GND 4 ISL6612B, ISL6613B +7V to +12V +5V TO 12V +5V TO 12V VCC VCC BOOT BOOT UGATE UGATE PVCC PVCC PHASE PHASE ISL6612B ISL6612B PWM PWM LGATE LGATE ...

Page 5

... PWM ISL6613B 1MHz, V PWM I ISL6612B, f =300kHz, V PVCC PWM ISL6613B, f =300kHz, V PWM I ISL6612B 1MHz, V PVCC PWM ISL6613B 1MHz, V PWM 0°C to 85°C -40°C to 85°C 0°C to 85°C -40°C to 85° PWM PWM PWM VCC = 12V VCC = 12V VCC = 12V ...

Page 6

... Connect this pin to a +12V bias supply. Place a high quality low ESR ceramic capacitor from this pin to GND PVCC This pin supplies power to both upper and lower gate drives in ISL6613B; only the lower gate drive in ISL6612B. Its operating range is +5V to 12V. Place a high quality low ESR ceramic capacitor from this pin to GND PHASE Connect this pin to the SOURCE of the upper MOSFET and the DRAIN of the lower MOSFET ...

Page 7

... PDLL Operation Designed for versatility and speed, the ISL6612B and ISL6613B MOSFET drivers control both high-side and low-side N-Channel FETs of a half-bridge power train from one externally provided PWM signal. Prior to VCC exceeding its POR level, the Pre-POR over- voltage protection function is activated during initial start-up; the ...

Page 8

... POR (7V) to 12V, but the lower drive rail can range from 12V down to 5V depending on what voltage is applied to PVCC. The ISL6613B ties the upper and lower drive rails together. Simply applying a voltage from 12V on PVCC sets both gate drive rail voltages simultaneously. ...

Page 9

... HI2 EXT2 LO2 R GI1 ------------- = EXT1 G1 EXT2 ISL6612B, ISL6613B UVCC (EQ FIGURE 3. TYPICAL UPPER-GATE DRIVE TURN-ON PATH • ⎞ Q2 • ⎟ ⎠ (EQ defined at a and the GS2 is the driver’s total Q1 VCC Q* FIGURE 4 ...

Page 10

... D2 (DATUM B) D2 INDEX AREA (DATUM N (Nd-1)Xe REF. BOTTOM VIEW 0.415 NX (b) (A1) 5 SECTION "C-C" 10 ISL6612B, ISL6613B L10.3x3 2X 0. LEAD DUAL FLAT NO-LEAD PLASTIC PACKAGE 2X 0. SYMBOL 0. 0. NOTES: 1. Dimensioning and tolerancing conform to ASME Y14.5-1994. ...

Page 11

... SEATING PLANE - -C- α 0.10(0.004) 0.25(0.010 SIDE VIEW BOTTOM VIEW 11 ISL6612B, ISL6613B M8.15B 8 LEAD NARROW BODY SMALL OUTLINE EXPOSED PAD PLASTIC PACKAGE SYMBOL MIN A 0.056 A1 0.001 B 0.0138 C 0.0075 L D 0.189 E 0.150 ...

Page 12

... However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see www.intersil.com 12 ISL6612B, ISL6613B M8.15 (JEDEC MS-012-AA ISSUE C) 8 LEAD NARROW BODY SMALL OUTLINE PLASTIC ...

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